KTP crystal growth method suitable for PPKTP device production

Abstract

The invention discloses a KTP crystal growth method suitable for manufacturing a PPKTP device. The method comprises the following steps that: A) a long X-direction platy seed crystal is manufactured, a seed plate is cut along an XZ plane in the obtained longest X-direction KTP original crystal blank, a YZ plane is processed at the longest X-direction position perpendicular to the Z direction, the XZ plane on the two ends of the X-direction center line is chamfered along the X-direction center line on the YZ plane, the range of the formed vertex angle alpha is more than 0 degree and less than or equal to 180 degrees, and a beveling surface is ground and is taken as a seed crystal growth plane; and B) the seed crystal is immersed into a melting solution to cultivate according to the growth plane of the seed crystal, and the growth of the crystal is performed. The method utilizes the long X-direction line seed crystal to control the speed rate of the selective growth in the crystal growth process, and further prolongs the X-direction length of the seed crystal by the coarse X plane; moreover, compared with the ordinary fluxing agent growth method, the X-direction index of refraction and the electrical conductivity uniformity of the generated crystal are greatly improved, and the generated crystal is suitable for producing an optical parameter device with high quality and a PPKTP device.

Description

technical field [0001] The invention relates to a crystal growth method, in particular to a KTP crystal (potassium titanyl phosphate crystal) growth method suitable for making PPKTP devices (periodically polarized potassium titanyl phosphate). The method is a further improvement on the existing flux crystal growth method. Background technique [0002] Potassium titanyl phosphate (KTiOPO 4 KTP for short) crystal is a kind of nonlinear optical crystal with excellent comprehensive performance. It has the advantages of large nonlinear coefficient, good optical uniformity, good thermal conductivity, wide transmission band, etc., and has good physical, chemical and mechanical properties. From crystal growth and processing to optoelectronic devices, a relatively large-scale industrial market has been formed internationally. [0003] The main method of this kind of crystal growth is the flux method. After more than 20 years of development, the process has been relatively mature, ...

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Problems solved by technology

In addition, since the uniformity of refractive index and electrical conductivity of the crystal is a function of the growth temperature, the uniformity of the crystal grown by the general growth method is spherically symmetrical with the seed crystal as the center. The uniformity of the refractive index and conductivity far exceeds the requirements of PPKTP technology for wafer quality, making quasi-phase matching impossible to achieve

At the same time, this inhomogeneity will lead to a higher OPO oscillation threshold in the X direction, and a decrease in the stability of the output laser.

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