Etching method to enhance web growth
A network and substrate technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as the performance impact of SiC devices, achieve the effect of increasing the film growth area and shortening the epitaxy time
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[0026] The technical solutions of the present invention will be described in further detail below with reference to the accompanying drawings and embodiments.
[0027] figure 1 It is a flow chart of embodiment 1 of the etching method for improving Web Growth in the present invention, as shown in the figure, this embodiment specifically includes:
[0028] Step 101, cleaning the processed SiC substrate processed by using the original silicon carbide SiC substrate with positive axis 4H or 6H by ultrasonic;
[0029] Step 102, using an alkaline mixture to boil the processed SiC substrate at a temperature of 85 degrees for 20 minutes, and then rinse it with deionized water;
[0030] Step 103, soaking the processed SiC substrate in a bath at 85 degrees for 20 minutes with a concentrated sulfuric acid mixture, and then rinsing with deionized water;
[0031] Step 104, soak the processed SiC substrate at a temperature of 85 degrees for 20 minutes with an acidic mixed solution, and the...
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