The invention discloses a growth method of a low-stress aluminum nitride crystal. According to the growth method, rapid two-dimensional mode growth of an AIN (Aluminum Nitride) crystal is achieved ina temperature and pressure variable mode, the stress of a single aluminum nitride crystal is reduced, and the single aluminum nitride crystal which has no crack on a growth surface and has naturally grown steps is grown. According to the growth method, a temperature control process and a mode that the temperate and the pressure of a specific temperature interval are varied in the growth process are adopted, the atom nucleation rate is reduced because of high pressure and low temperatures at a former stage, the primary nucleation tidiness is improved, and substrate decomposition failure is inhibited; at a middle growth stage, the pressure is reduced, so that the growth velocity is increased, and substrate decomposition is retarded; at a later stage, the temperature and the pressure are increased, nitrogen source supply is increased, a three-dimension island growth mode is avoided, the phenomena of non-uniform deposition and relatively large stress are reduced, secondary temperature increasing is implemented after cooling, the stress inside the crystal is reduced, cracks on the surface of the crystal is healed, a silicon carbide substrate is decomposed, and thus a self-striped high-quality single aluminum nitride crystal is grown.