6results about How to "Reduced nucleation rate" patented technology

The application provides a lithium-rich manganese-based material and a preparation method and application thereof. The chemical general formula of the lithium-rich manganese-based material is Li 1.2+x (Mn a Co b Ni c ) 0.8‑x O2, wherein, -0.2

The application discloses high-quality bismuth-based perovskite monocrystals and a preparation method and application thereof. The preparation method of the high-quality bismuth-based perovskite monocrystals comprises the following steps: S1, preparing a single crystal growth precursor solution of the bismuth-based perovskite; S2, performing heat aging treatment on the prepared single crystal growth precursor solution; and S3, controlling the single crystal growth precursor solution after the heat aging treatment to crystallize and grow the bismuth-based perovskite monocrystals. The heat aging process of the precursor solution can obviously reduce the nucleation rate, effectively improve the crystallization quality, and finally obtain large-size high-quality bismuth-based perovskite monocrystals. The method has the advantages of simple process, strong operability, mild growth conditions, low required temperature, energy saving, low equipment requirement, low cost, high success rate, no need of additional seed crystals, and continuous growth of large-size high-quality perovskite monocrystals.

The invention discloses an aluminum alloy bar as well as a low-temperature extrusion preparation method and application thereof, and belongs to the technical field of aluminum alloy materials. The aluminum alloy bar comprises the following components in percentage by weight: less than or equal to 0.1% of Si, 1.3%-1.4% of Fe, 2.6%-2.8% of Cu, 1.7%-1.8% of Mg, 1.4%-1.6% of Ni, less than or equal to 0.25% of Zn, 0.05% of Ti and the balance of Al. The single impurity is less than or equal to 0.05%, the total impurity is less than or equal to 0.15%, and the balance is Al. The tensile strength of the aluminum alloy bar is larger than or equal to 415 MPa, the yield strength is larger than or equal to 305 MPa, the ductility is larger than or equal to 11.0%, and grains are fine and evenly distributed.

The invention relates to the technical field of nickel-based powder, in particular to a preparation method and a preparation device of nano nickel-based powder, and the preparation method comprises the following steps: A, uniformly mixing nickel salt, a reducing agent, an additive and a solvent, and adjusting the pH value to 8-12 to obtain a precursor solution; b, the precursor solution is subjected to a reaction for 10-60 s and 10-60 min in a nucleation temperature section and a growth temperature section in sequence respectively, and then is frozen for 5-20 min in a freezing temperature section, and a nano nickel-based particle mixture is obtained; wherein the temperature of the nucleation temperature section is higher than that of the growth temperature section, and the temperature of the growth temperature section is higher than that of the freezing temperature section; and C, sequentially separating, washing and drying the nano nickel-based particle mixture to obtain the nano nickel-based powder. According to the preparation method of the nano nickel-based powder and the preparation device of the nano nickel-based powder, on the premise that the production cost is reduced, it is guaranteed that the size uniformity, dispersity and morphology of the nano nickel-based powder are controllable.

This invention relates to a method for obtaining high-density nanoscale lines, belonging to the field of semiconductor technology. It solves the problem of high manufacturing costs associated with the use of expensive extreme ultraviolet (EUV) lithography machines to reduce the width of the sacrificial layer in existing technologies. The method includes the following steps: sequentially forming a dielectric layer and an amorphous silicon layer on a substrate; irradiating a mask with a laser to crystallize silicon in a portion of the amorphous silicon layer, wherein the grain boundaries of the polycrystalline silicon formed after silicon crystallization in the amorphous silicon layer are determined by the spacing of regularly shaped apertures on the mask; planarizing the grain boundaries of the polycrystalline silicon in the amorphous silicon layer; removing the grain boundaries using an etchant to form grain boundary trenches; and forming a sacrificial layer using the grain boundary trenches, and obtaining nanoscale lines on the substrate using a sidewall transfer method.

The present invention relates to cement and its manufacturing field, specifically discloses a low-heat high-grade cement and a preparation method thereof, wherein the low-heat high-grade cement is obtained by mixing low-heat high-grade cement clinker with gypsum, admixture, and granulated blast furnace slag; the raw material ratio of low-heat high-grade cement clinker is by weight percentage: 75-86wt% of lime, 3-6wt% of tailings waste, 10-16wt% of clastic rock, and 1-3wt% of yellow phosphorus slag; the admixture is a mixture of polyacrylic acid and polytetrafluoroethylene. By adding polytetrafluoroethylene to polyacrylic acid, the hydration heat inhibition effect of polyacrylic acid is significantly improved, and yellow phosphorus slag and granulated blast furnace slag are added at the same time, the early strength of cement is also improved, and the synergistic effect of early strength and low hydration heat of low-heat high-grade cement is achieved.