3results about How to "Reduced nucleation rate" patented technology

The application provides a lithium-rich manganese-based material and a preparation method and application thereof. The chemical general formula of the lithium-rich manganese-based material is Li 1.2+x (Mn a Co b Ni c ) 0.8‑x O2, wherein, -0.2

The application discloses high-quality bismuth-based perovskite monocrystals and a preparation method and application thereof. The preparation method of the high-quality bismuth-based perovskite monocrystals comprises the following steps: S1, preparing a single crystal growth precursor solution of the bismuth-based perovskite; S2, performing heat aging treatment on the prepared single crystal growth precursor solution; and S3, controlling the single crystal growth precursor solution after the heat aging treatment to crystallize and grow the bismuth-based perovskite monocrystals. The heat aging process of the precursor solution can obviously reduce the nucleation rate, effectively improve the crystallization quality, and finally obtain large-size high-quality bismuth-based perovskite monocrystals. The method has the advantages of simple process, strong operability, mild growth conditions, low required temperature, energy saving, low equipment requirement, low cost, high success rate, no need of additional seed crystals, and continuous growth of large-size high-quality perovskite monocrystals.

This invention relates to a method for obtaining high-density nanoscale lines, belonging to the field of semiconductor technology. It solves the problem of high manufacturing costs associated with the use of expensive extreme ultraviolet (EUV) lithography machines to reduce the width of the sacrificial layer in existing technologies. The method includes the following steps: sequentially forming a dielectric layer and an amorphous silicon layer on a substrate; irradiating a mask with a laser to crystallize silicon in a portion of the amorphous silicon layer, wherein the grain boundaries of the polycrystalline silicon formed after silicon crystallization in the amorphous silicon layer are determined by the spacing of regularly shaped apertures on the mask; planarizing the grain boundaries of the polycrystalline silicon in the amorphous silicon layer; removing the grain boundaries using an etchant to form grain boundary trenches; and forming a sacrificial layer using the grain boundary trenches, and obtaining nanoscale lines on the substrate using a sidewall transfer method.