Preparation method of large-dimension high-quality graphene based on self limitation nucleation growth

Abstract

The invention relates to a preparation method of large-dimension high-quality graphene based on self limitation nucleation growth. The method concretely comprises the following steps of preparing a nickel-covered copper substrate; fast raising the temperature in the vacuum protection atmosphere; after the specific growth temperature is reached, introducing process gas to perform graphene growth. In the primary growth period, the surface of the metal is nickel; the nucleation point of the graphene can be effectively controlled. In the growth process, the copper gradually diffuses to the nickel layer to form rich-nickel copper nickel alloy; the fast growth of the nucleation point can be promoted. Along with the continuous increase of the copper ingredients in the surface layer, the large-dimension single crystal formation of the single-layer graphene can be effectively facilitated; meanwhile, the fast growth of single crystals can be maintained; a large-dimension high-quality continuous graphene film can be realized.

Description

technical field [0001] The invention belongs to the technical field of graphene preparation, and relates to a method for preparing large-size and high-quality graphene based on self-limited nucleation and growth. Background technique [0002] As a semiconductor two-dimensional material, graphene has great application potential in many fields. Large-area graphene growth generally uses transition metals as catalysts, and copper-nickel has become the most commonly used substrate due to price reasons. The solubility of carbon atoms in the copper substrate is small, and the carbon atoms produced by catalysis are enriched and nucleated on the copper surface. Therefore, at the beginning of the growth of graphene on the copper substrate, a large number of nucleation points will be formed, making the grown graphene crystals The grains are smaller and there are more grain boundaries in the film. The presence of grain boundaries significantly degrades the performance of graphene film...

AI Technical Summary

Problems solved by technology

[0003] Nickel has high carbon solubility at high temperature. When graphene is grown on a nickel substrate, there are fewer nucleation points of graphene during the high temperature process, and the carbon atoms produced by catalysis are solid-dissolved in nickel metal. A large amount of carbon atoms will be precipitated, which not only increases the number of nucleation points, but also easily forms multi-layer graphene, which affects the quality of the film

Images