Graphene film, and making method and use thereof

A graphene film and metal substrate technology, applied in the field of graphene film and its production method and use, can solve the problems of wasting raw materials, limiting the output of graphene film and the like

Active Publication Date: 2015-07-29
2D CARBON CHANGZHOU TECH INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, the preparation methods of graphene mainly include: mechanical exfoliation method, oxidation-reduction method, crystal epitaxial growth method, chemical vapor deposition (CVD), organic synthesis method and carbon nanotube exfoliation method, etc., which are suitable for industrial large-scale production. Chemical vapor deposition method, this method refers to the chemical reaction of reactant substances under gaseous conditions, carbon atoms are deposited on the surface of the heated substrate, and then the process technology of solid material is obtained, high-quality large-area graphene can be prepared by CVD method However, the current process usually only prepares graphene on a single-layer substrate, which limits the output of graphene films; and in the later transfer of graphene films, it needs to be cut, wasting a lot of raw materials

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  • Graphene film, and making method and use thereof
  • Graphene film, and making method and use thereof
  • Graphene film, and making method and use thereof

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preparation example Construction

[0017] The preparation method of graphene film of the present invention comprises the following steps:

[0018] (1) Prepare a carrier for growing a graphene film, the carrier is a multi-layer separator-metal substrate structure formed by stacking separators and metal substrates at intervals;

[0019] (2) Place the carrier in a reaction furnace and heat it under vacuum or a mixture of inert gas and reducing gas;

[0020] (3) When the temperature reaches 900-1100°C, pass inert gas and reducing gas into the reaction furnace and heat-preserve and anneal, and then apply carbon source to form a graphene film on the metal substrate;

[0021] (4) Separate the separator from the metal substrate;

[0022] (5) Separate the graphene film from the metal substrate.

[0023] In a preferred embodiment of the method of the present invention, step (1) is implemented as follows: the spacer and the metal substrate are stacked at a distance of 10-100 μm, preferably 10-50 μm, more preferably 10-3...

Embodiment 1

[0065] After the upper surface of the copper foil 2 (400x600x0.05mm) is polished, it is washed with deionized water and acetone in sequence, and then dried naturally. Then place the adjacent graphite plate 1 (400x600x0.1mm) and the copper foil 2 at an interval of 20 μm (the interval is realized with a square of graphite plate material), such as figure 1 The sequence shown is superimposed to form a 6-layer structured carrier. Put the prepared carrier into a 130L rectangular reaction furnace, seal the reaction furnace, and use a vacuum pump and a molecular pump to evacuate to 10 -3 Pa, then raise the temperature to 1000°C, feed hydrogen and argon at a flow rate of 20sccm (sccm refers to the flow rate in cubic centimeters per minute at 25°C and atmospheric pressure) and 500sccm, respectively, and keep warm for 30 minutes, then pass in at a flow rate of 200sccm Methane, stop the ventilation after 15 minutes and lower the temperature at 15°C / min. After cooling down to room temper...

Embodiment 2

[0069] After the upper surface of the nickel foil (400x600x0.05mm) was polished, it was washed with deionized water and acetone in sequence, and then dried naturally. Then adjacent graphite plates (400x600x0.1mm) and nickel foils are stacked sequentially at an interval of 25 μm (the interval is realized by a square of graphite plate material) to form a carrier with a 50-layer structure. Put the prepared carrier into a 130L rectangular reaction furnace, seal the reaction furnace, and use a vacuum pump and a molecular pump to evacuate to 10 -3 Pa, then raise the temperature to 1100°C, feed hydrogen and argon at flow rates of 20sccm and 500sccm respectively, keep warm for 30 minutes, then flow methane at a flow rate of 10sccm, stop ventilation after 30 minutes and cool down at 10°C / min. After cooling down to room temperature, the carrier was taken out, and the graphite plate was separated from the nickel foil using a jig to obtain a graphene film with nickel foil.

[0070] Apply...

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Abstract

The invention relates to a making method of a graphene film. The method comprises the following steps: 1, preparing a carrier for growing the graphene film, wherein the carrier is a multilayer separator plate-metal substrate structure formed by superposing separator plates and metal substrates at intervals; 2, placing the carrier in a reaction furnace, and heating under a vacuum condition or in an inert gas and reducing gas mixture; 3, introducing the inert gas and reducing gas into the reaction furnace when the temperature reaches 900-1100DEG C, carrying out heat insulation annealing, introducing a carbon source, and forming graphene films on the metal substrate; 4, separating the separators from the metal substrates; and 5, separating the graphene films from the metal substrates. The invention also relates to the graphene film made through the method, and a use of the graphene film as a transparent conductive electrode.

Description

technical field [0001] The invention relates to a graphene film and its preparation method and application. Background technique [0002] Graphene is a two-dimensional structure material composed of honeycomb single-layer carbon atoms. Its unique two-dimensional structure and excellent crystallographic properties make it of great value in the fields of optoelectronic devices, sensors and solar energy. [0003] At present, the preparation methods of graphene mainly include: mechanical exfoliation method, oxidation-reduction method, crystal epitaxial growth method, chemical vapor deposition (CVD), organic synthesis method and carbon nanotube exfoliation method, etc., which are suitable for industrial large-scale production. Chemical vapor deposition method, this method refers to the chemical reaction of reactant substances under gaseous conditions, carbon atoms are deposited on the surface of the heated substrate, and then the process technology of solid material is obtained, ...

Claims

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Application Information

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IPC IPC(8): C01B31/04
Inventor 金虎常博文殷洪康陈新瑶王增奎彭鹏周振义
Owner 2D CARBON CHANGZHOU TECH INC
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