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Polycrystalline gallium nitride growth device

A growth device and gallium nitride technology, which is applied in polycrystalline material growth, single crystal growth, crystal growth, etc., can solve the problem of low output of polycrystalline gallium nitride

Active Publication Date: 2020-04-03
SHANGHAI XITANG SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Based on this, it is necessary to provide an improved polycrystalline gallium nitride growth device for the problem of low yield of polycrystalline gallium nitride grown by traditional HVPE equipment

Method used

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  • Polycrystalline gallium nitride growth device

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Embodiment Construction

[0020] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. Preferred embodiments of the invention are shown in the drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present invention more thorough and comprehensive.

[0021] It should be noted that when an element is referred to as being “fixed” to another element, it can be directly on the other element or there can also be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or intervening elements may also be present. As used herein, the terms "vertical", "horizontal", "left", "right", "upper", "lower", "front", "rear", "circumferential" and...

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Abstract

The invention relates to a polycrystalline gallium nitride growth device. The polycrystalline gallium nitride growth device comprises a reaction container, the reaction container is axially provided with a first chamber main body and a second chamber main body which are communicated with each other, the first chamber main body is connected with at least two gas inflow channels, and a barrel is arranged in the second chamber main body; and the barrel body is provided with openings corresponding to the at least two gas inflow channels, and a plurality of components with through holes are arranged on the barrel at intervals in the axial direction of the barrel. The polycrystalline gallium nitride growth device can effectively increase the yield of polycrystalline gallium nitride, and the sizeof the polycrystalline gallium nitride growth device cannot be increased.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to a polycrystalline gallium nitride growth device. Background technique [0002] The third-generation semiconductor materials are wide-bandgap semiconductor materials represented by gallium nitride (GaN), silicon carbide (SiC), diamond, and zinc oxide. Compared with semiconductor materials silicon (Si) and germanium (Ge), second-generation semiconductor materials gallium arsenide (GaAs) and indium phosphide (InP), etc., the third-generation semiconductor materials have a large band gap, high breakdown electric field, The unique properties of large thermal conductivity, high electron saturation drift speed, and small dielectric constant make it show great application potential in optoelectronic devices, power electronics, radio frequency microwave devices, lasers and detectors. research hotspots. [0003] GaN single crystal growth methods include Hydride Vapor Phas...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/02C30B29/40
CPCC30B25/02C30B29/406
Inventor 林岳明乔焜高明哲
Owner SHANGHAI XITANG SEMICON TECH CO LTD
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