Aln thin film grown on cu substrate and its preparation method and application
A substrate and thin film technology, applied in the field of AlN thin film and its preparation, can solve the problems affecting the quality of epitaxial thin film growth, unstable chemical properties of metal Cu substrate, difficult thin film epitaxy, etc. The effect of small width value and lower growth temperature
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Embodiment 1
[0035] A method for preparing an AlN thin film grown on a Cu substrate, comprising the following steps:
[0036] (1) Selection of the substrate and its crystal orientation: Cu substrate is used, and the (111) plane is 0.5° away from the (100) direction as the epitaxial plane. The crystal epitaxial orientation relationship is: the (0001) plane of AlN is parallel to the ( 111) Surface.
[0037] (2) Substrate surface polishing, cleaning and annealing treatment: firstly, the surface of the Cu substrate is polished with diamond slurry, and the surface of the substrate is observed with an optical microscope until there are no scratches, and then the method of chemical mechanical polishing is used for polishing ; Secondly, put the Cu substrate in deionized water and ultrasonically clean it at room temperature for 3 minutes to remove the dirt particles on the surface of the Cu substrate, then wash it with acetone and ethanol in order to remove the surface organic matter, and dry it wi...
Embodiment 2
[0046] A method for preparing an AlN thin film grown on a Cu substrate, comprising the following steps:
[0047] (1) Selection of the substrate and its crystal orientation: Cu substrate is used, and the (111) plane is 1° away from the (100) direction as the epitaxial plane. The crystal epitaxial orientation relationship is: the (0001) plane of AlN is parallel to the ( 111) Surface.
[0048] (2) Substrate surface polishing, cleaning and annealing treatment: firstly, the surface of the Cu substrate is polished with diamond slurry, and the surface of the substrate is observed with an optical microscope until there are no scratches, and then the method of chemical mechanical polishing is used for polishing ; Secondly, put the Cu substrate in deionized water and ultrasonically clean it at room temperature for 5 minutes to remove the dirt particles on the surface of the Cu substrate, then wash it with acetone and ethanol in order to remove the surface organic matter, and dry it with...
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