37results about How to "The growth process is unique and simple" patented technology

The invention discloses a doped GaN film growing on a La0.3Sr1.7AlTaO6 substrate. The doped GaN film comprises a GaN buffer layer growing on the La0.3Sr1.7AlTaO6 substrate, an undoped GaN layer growing on the GaN buffer layer and a doped GaN film growing on the undoped GaN layer. The doped GaN film is an n-type doped GaN film or a p-type doped GaN film. The invention further discloses a manufacturing method of the doped GaN film growing on the La0.3Sr1.7AlTaO6 substrate. Compared with the prior art, the doped GaN film growing on the La0.3Sr1.7AlTaO6 substrate and the manufacturing method of the doped GaN film have the advantages of simple growing process and low manufacturing cost. Besides, the manufactured n-type or p-type doped film has low defect density, good crystallization quality and optical property.

The invention relates to a high-uniformity AlN film growing on a sapphire substrate. The high-uniformity AlN film growing on the sapphire substrate comprises an Al2O3 substrate, an AlN nucleation layer and an AlN film body, wherein the AlN nucleation layer and the AlN film body sequentially grow in an epitaxial mode from the face (0001) of the Al2O3 substrate to the direction deviating from the face (10-10) by 0.2 degree. The invention further relates to a preparing method of the AlN film. The method includes the following steps that a, the Al2O3 substrate is cleaned and annealed; b, the AlN nucleation layer grows on the Al2O3 substrate treated through the step a in an epitaxial mode; c, the AlN film body grows on the AlN nucleation layer growing through the step b in an epitaxial mode. The high-uniformity AlN film growing on the sapphire substrate is used for preparing a photoelectric device of a nitride device or used as a piezoelectric film for an insulating buried layer device and an acoustic surface wave device of an SOI material. The AlN film is low in cost, high in quality, high in uniformity and wide in application range.

The invention discloses an LED epitaxial wafer grown on a metal Al substrate, which comprises a metal Al substrate, the (111) crystal plane of the metal Al substrate as the epitaxial plane, and Al grown on the metal Al substrate. 2 o 3 The protective layer, and the crystal epitaxial orientation relationship is GaN(0001) / / Al 2 o 3 (0001) / / Al(111), in Al 2 o 3 U-GaN thin film layer, N-GaN thin film layer, InGaN / GaN multiple quantum well layer, and p-type GaN thin film grown from bottom to top on the protective layer. The invention improves the luminous efficiency of the LED by selecting a suitable crystal orientation and obtaining a high-quality GaN epitaxial thin film on the Al(111) substrate.

The invention discloses an AlN film growing on a Cu substrate. The AlN film growing on the Cu substrate is characterized by comprising the Cu substrate, an AlN buffer layer and an AlN film body, the AlN buffer layer grows on the Cu substrate, and the AlN film body grows on the AlN buffer layer; the face (111) deviating towards the direction of the face (100) by 0.5 to 1 degree serves as an epitaxial face of the Cu substrate. The invention further discloses the AlN film growing on the Cu substrate and a preparing method of the AlN film. The AlN film grows through the pulsed laser deposition technical growth technology and due to the fact that large kinetic energy can be provided for a precursor of the film through pulsed laser radiation, the growth temperature of the AlN film can be reduced to a great degree; in addition, due to the low temperature, the interfacial reaction between an epitaxial layer and the substrate is restrained, an important guarantee is provided for epitaxial growth of the AlN film on the metal Cu substrate, and the AlN film which has good crystalline quality and grows on the Cu substrate is obtained.

The invention discloses a high-quality AlN thin film epitaxially grown on a Si substrate, and a preparation method of the high-quality AlN thin film. The preparation method specifically comprises the following steps of 1) choosing the Si substrate; 2) pre-paving an Al layer in an epitaxial manner; 3) enabling an AlN core-forming layer to be grown; and 4) enabling the AlN thin film to be grown, wherein in the growth process of the AlN thin film, trimethyl gallium is introduced at a speed of 0.2-0.5mL / min to be used as a surfactant. By adoption of the preparation method, the relatively thick and crack-free AlN thin film with a thickness which is greater than 1[mu]m can be manufactured; inter-island union and two-dimensional growth of the AlN thin film are realized; compared with a multi-step multi-layered or high-temperature AlN thin film growth technology, the time consumption for preparing the thin film by the method provided by the invention can be shortened; the growth process is unique, simple and feasible; the large-scale production can be realized conveniently; and the thin film can be widely applied to the fields of a photovoltaic thin film for an LED, an ultraviolet and deep ultraviolet device, a surface acoustic wave device and the like.

The invention discloses an LED epitaxial wafer growing on an Ag substrate. The LED epitaxial wafer growing on the Ag substrate comprises the Ag substrate, an AlN buffer layer, a U-GaN film layer, an N-GaN film layer, an InGaN / GaN multi-quantum-well layer and a P-GaN film. The AlN buffer layer, the U-GaN film layer, the N-GaN film layer, the InGaN / GaN multi-quantum-well layer and the P-GaN film sequentially grow on the Ag substrate. By the adoption of the low-temperature growth technology, a GaN film grows on the novel metal Ag substrate in an epitaxial mode, so that the LED epitaxial wafer with the high quality is obtained; by the adoption of the metal Ag substrate, the growth technology is simple, the price is low, and the manufacturing cost of a device can be reduced to a great extent; by the selection of the proper crystal orientation, the GaN epitaxial film with the high quality is obtained from the Ag substrate (111) and the efficiency of nitride devices such as a photoelectric detector can be improved to a great extent.

The invention discloses an InGaN / GaN multiple quantum well growing on a La0.3Sr1.7AlTaO6 substrate. The InGaN / GaN multiple quantum well comprises a GaN buffer layer growing on an La0.3Sr1.7AlTaO6 substrate, an undoped GaN layer growing on the GaN buffer layer, and the InGaN / GaN multiple quantum well growing on the undoped GaN layer. The InGaN / GaN multiple quantum well with the photoluminescence peak position of 441nm and the half-peak breadth of 24.3nm has good optical performance. The invention further discloses a manufacturing method of the InGaN / GaN multiple quantum well. Compared with the prior art, the InGaN / GaN multiple quantum well growing on the La0.3Sr1.7AlTaO6 substrate and the manufacturing method of the InGaN / GaN multiple quantum well have the advantages of simple growing process and low manufacturing cost. Meanwhile, the InGaN / GaN multiple quantum well has good crystallization quality and optical performance.

The invention discloses a GaN thin film growing on a metal Al substrate and a preparing method and application thereof. The GaN thin film growing on the metal Al substrate comprises the Al substrate, an Al2O3 protecting layer growing on an epitaxy face which is a face (111) of the Al substrate and a GaN thin film layer growing on the Al2O3 protecting layer in an epitaxial mode. The crystal epitaxial orientation relationship of the Al2O3 protecting layer and the GaN thin film layer is GaN (0001) / / Al2O3 (0001) / / Al (111). Proper crystal orientation is selected, so that a high-quality GaN epitaxial thin film is obtained on the Al (111) substrate and is used for improving nitride device efficiency. The GaN thin film is mainly used as dielectric layer thin films of a sound wave resonator, a logic circuit, a light-emitting diode, an optoelectronic thin film device, a solar cell, a photodiode, a photoelectric detector, a laser device and the like.

The invention provides an epitaxial growth GaN thin film on a metal Al substrate. The GaN thin film comprises an Al substrate, an AlN buffer layer, a GaN buffer layer, an amorphous AlN insertion layer and a GaN thin film layer, wherein the AlN buffer layer grows on the epitaxial surface of the Al substrate (111); the GaN buffer layer epitaxially grows on the AlN buffer layer; the amorphous AlN insertion layer grows on the GaN buffer layer; the GaN thin film layer epitaxially grows on the amorphous AlN insertion layer; and the crystal epitaxy orientation relationship between the AlN buffer layer and the GaN thin film layer is that GaN (0001) is parallel to AlN (0001) and parallel to Al (111). The high-quality GaN epitaxial thin film is obtained on the Al substrate (111) through selecting proper crystal orientation; and the efficiency of a nitride device is improved.