The invention discloses an LED epitaxial
wafer growing on an Ag substrate. The LED epitaxial
wafer growing on the Ag substrate comprises the Ag substrate, an AlN buffer layer, a U-GaN film layer, an N-GaN film layer, an InGaN / GaN multi-
quantum-well layer and a P-GaN film. The AlN buffer layer, the U-GaN film layer, the N-GaN film layer, the InGaN / GaN multi-
quantum-well layer and the P-GaN film sequentially grow on the Ag substrate. By the adoption of the low-temperature growth technology, a GaN film grows on the novel
metal Ag substrate in an epitaxial mode, so that the LED epitaxial
wafer with the high quality is obtained; by the adoption of the
metal Ag substrate, the growth technology is simple, the price is low, and the manufacturing cost of a device can be reduced to a great extent; by the selection of the proper
crystal orientation, the GaN epitaxial film with the high quality is obtained from the Ag substrate (111) and the efficiency of
nitride devices such as a photoelectric
detector can be improved to a great extent.