AlN thin film growing on metal Al substrate and preparing method and application thereof
A substrate and metal technology, which is applied in the field of metal-organic chemical vapor deposition to synthesize films, can solve problems affecting the quality of epitaxial film growth, unstable chemical properties of metal Al substrates, and difficulties in film epitaxy, so as to improve internal quantum efficiency , shortened nucleation time, and excellent thermal conductivity
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0041] Such as figure 1 As shown, the AlN thin film grown on the metal Al substrate shown in the present invention includes an Al substrate 1, and the (111) plane of the Al substrate is the Al grown on the epitaxial surface. 2 o 3 protective layer 2 as well as the Al 2 o 3 AlN film layer 3 epitaxially grown on protective layer 2, wherein Al 2 o 3 The crystal epitaxial orientation relationship between protective layer 2 and AlN thin film layer 3 is AlN(0001) / / Al 2 o 3 (0001) / / Al(111); The AlN film grown on the metal Al substrate is prepared by the following method:
[0042] 1) Substrate treatment: select metal Al as the substrate, firstly polish the surface of the Al substrate with diamond slurry, observe the surface of the substrate with an optical microscope and when there is no scratch, then use the method of chemical mechanical polishing to polish the substrate Perform polishing treatment; then put the substrate into deionized water and ultrasonically clean it at roo...
Embodiment 2
[0046] The difference from Example 1 is that the AlN thin film is prepared by the following method:
[0047] 1) Substrate treatment: select metal Al as the substrate, firstly polish the surface of the Al substrate with diamond slurry, observe the surface of the substrate with an optical microscope and when there is no scratch, then use the method of chemical mechanical polishing to polish the substrate Perform polishing treatment; then put the substrate into deionized water and ultrasonically clean it at room temperature for 5 minutes to remove the dirt particles on the surface of the Al substrate, and then wash with hydrochloric acid, acetone, and ethanol in sequence to remove surface organic matter; the cleaned substrate is washed with high Blow dry with pure dry nitrogen; then place the substrate Al at a pressure of 2×10 -10 In the growth chamber of Torr’s UHV-PLD, bake at a high temperature of 550 ° C for 1 hour to remove pollutants on the substrate surface, and then air c...
PUM
Property | Measurement | Unit |
---|---|---|
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com