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GaN film growing on glass substrate and preparation method thereof

A glass substrate and thin film technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of high price, high price of sapphire and SiC substrates, and high LED manufacturing cost, achieve easy availability, improve photoelectric conversion efficiency, The effect of reducing production costs

Active Publication Date: 2017-04-26
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the luminous efficiency of LED has surpassed that of fluorescent lamps and incandescent lamps, the luminous efficiency of commercial LEDs is still lower than that of sodium lamps (150lm / W), and the price per lumen / watt is relatively high.
At present, most GaN-based LEDs are based on epitaxial growth on sapphire and SiC substrates. Large-scale sapphire and SiC substrates are expensive, resulting in high LED manufacturing costs.

Method used

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  • GaN film growing on glass substrate and preparation method thereof
  • GaN film growing on glass substrate and preparation method thereof
  • GaN film growing on glass substrate and preparation method thereof

Examples

Experimental program
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Embodiment 1

[0039] like figure 1 As shown, the GaN thin film grown on the glass substrate of the present embodiment includes an aluminum metal layer 11 grown on the glass substrate 10, a silver metal layer 12 grown on the aluminum metal layer, and a silver metal layer grown on the silver metal layer 12 AlN buffer layer 13, a GaN buffer layer 14 grown on the AlN buffer layer 13, and a GaN thin film 15 grown on the GaN buffer layer 14.

[0040] The preparation method of the GaN thin film grown on the glass substrate of the present embodiment comprises the following steps:

[0041] (1) Selection of substrate: use ordinary glass substrate;

[0042] (2) Substrate surface polishing and cleaning treatment;

[0043] The surface polishing of the substrate is specifically:

[0044] First, the surface of the glass substrate is polished with diamond slurry, and the surface of the substrate is observed with an optical microscope until there are no scratches, and then the chemical mechanical polishi...

Embodiment 2

[0057] The preparation method of the GaN thin film grown on the glass substrate of the present embodiment comprises the following steps:

[0058] (1) Selection of substrate: use ordinary glass substrate;

[0059] (2) Substrate surface polishing and cleaning treatment;

[0060] The surface polishing of the substrate is specifically:

[0061] First, the surface of the glass substrate is polished with diamond slurry, and the surface of the substrate is observed with an optical microscope until there are no scratches, and then the chemical mechanical polishing method is used for polishing;

[0062] The cleaning is specifically:

[0063] Put the glass substrate into deionized water and ultrasonically clean it at room temperature for 5 minutes to remove the dirt particles on the surface of the glass substrate, then wash it with acetone and ethanol in sequence to remove the surface organic matter, and dry it with high-purity dry nitrogen;

[0064] (3) Growth of the aluminum metal ...

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Abstract

The invention discloses a GaN film growing on a glass substrate and a preparation method thereof; the GaN film comprises an aluminium metal layer growing on the glass substrate, a silver metal layer growing on the aluminium metal layer, an AlN buffer layer growing on the silver metal layer, a GaN buffer layer growing on the AlN buffer layer, and a GaN film growing on the GaN buffer layer. The invention also discloses a preparation method of the GaN film growing on the glass substrate. The GaN film is simple in growing process, low in preparation cost and defect density, good in crystallization quality, and high in electric and optics performance.

Description

technical field [0001] The invention relates to a GaN thin film, in particular to a GaN thin film grown on a glass substrate and a preparation method thereof. Background technique [0002] Light-emitting diode (LED), as a new type of solid-state lighting source and green light source, has outstanding features such as small size, low power consumption, environmental protection, long service life, high brightness, low heat and colorful, and is widely used in outdoor lighting, commercial lighting and decoration Engineering and other fields have a wide range of applications. At present, under the background of the increasingly serious problem of global warming, saving energy and reducing greenhouse gas emissions has become an important issue faced by the whole world. A low-carbon economy based on low energy consumption, low pollution, and low emissions will become an important direction of economic development. In the field of lighting, the application of LED light-emitting pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/32H01L33/20H01L33/06H01L33/00H01L33/10
CPCH01L33/0075H01L33/06H01L33/10H01L33/20H01L33/32
Inventor 李国强高芳亮张曙光
Owner SOUTH CHINA UNIV OF TECH
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