GaN film growing on glass substrate and preparation method thereof
A glass substrate and thin film technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of high price, high price of sapphire and SiC substrates, and high LED manufacturing cost, achieve easy availability, improve photoelectric conversion efficiency, The effect of reducing production costs
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Embodiment 1
[0039] like figure 1 As shown, the GaN thin film grown on the glass substrate of the present embodiment includes an aluminum metal layer 11 grown on the glass substrate 10, a silver metal layer 12 grown on the aluminum metal layer, and a silver metal layer grown on the silver metal layer 12 AlN buffer layer 13, a GaN buffer layer 14 grown on the AlN buffer layer 13, and a GaN thin film 15 grown on the GaN buffer layer 14.
[0040] The preparation method of the GaN thin film grown on the glass substrate of the present embodiment comprises the following steps:
[0041] (1) Selection of substrate: use ordinary glass substrate;
[0042] (2) Substrate surface polishing and cleaning treatment;
[0043] The surface polishing of the substrate is specifically:
[0044] First, the surface of the glass substrate is polished with diamond slurry, and the surface of the substrate is observed with an optical microscope until there are no scratches, and then the chemical mechanical polishi...
Embodiment 2
[0057] The preparation method of the GaN thin film grown on the glass substrate of the present embodiment comprises the following steps:
[0058] (1) Selection of substrate: use ordinary glass substrate;
[0059] (2) Substrate surface polishing and cleaning treatment;
[0060] The surface polishing of the substrate is specifically:
[0061] First, the surface of the glass substrate is polished with diamond slurry, and the surface of the substrate is observed with an optical microscope until there are no scratches, and then the chemical mechanical polishing method is used for polishing;
[0062] The cleaning is specifically:
[0063] Put the glass substrate into deionized water and ultrasonically clean it at room temperature for 5 minutes to remove the dirt particles on the surface of the glass substrate, then wash it with acetone and ethanol in sequence to remove the surface organic matter, and dry it with high-purity dry nitrogen;
[0064] (3) Growth of the aluminum metal ...
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