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High uniformity aln film grown on sapphire substrate and its preparation method and application

A uniformity and substrate technology, applied in the field of high uniformity AlN thin film and its preparation, can solve the problems of high cost, low LED luminous efficiency, and difficulty in preparing high uniformity AlN thin film, so as to improve utilization rate, Unique growth process with reproducible results

Active Publication Date: 2017-01-25
广州市艾佛光通科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The 21st century will be an era of new lighting sources represented by LEDs, but at this stage, LEDs have low luminous efficiency and high cost, which greatly restricts the development of LEDs in the direction of high efficiency, energy saving and environmental protection.
However, due to the small area of ​​the plasma plume generated by the laser, it is difficult to prepare a high-uniformity AlN film, which has become one of the limiting conditions for pulsed laser deposition.

Method used

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  • High uniformity aln film grown on sapphire substrate and its preparation method and application
  • High uniformity aln film grown on sapphire substrate and its preparation method and application
  • High uniformity aln film grown on sapphire substrate and its preparation method and application

Examples

Experimental program
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Effect test

Embodiment 1

[0031] combine Figure 1-3 . A kind of AlN thin film grown on the sapphire substrate (see attached figure 1 ), including those grown on Al 2 o 3 The substrate (11) and its (0001) plane deviate 0.2° towards the (10-10) plane as the AlN nucleation layer (12) grown on the crystal epitaxial direction, and the AlN thin film grown on the AlN nucleation layer (12) (13). The thickness of the AlN nucleation layer (12) is 6nm, the thickness of the AlN thin film (13) is 220nm, and the unevenness is 2.69%.

[0032] The preparation method of the AlN thin film grown on the sapphire substrate of the present embodiment is made by the following steps:

[0033] a. Al 2 o 3 The substrate is cleaned and annealed; the specific process of the annealing is: the substrate is placed in the annealing chamber, and the Al 2 o 3 The substrate is annealed for 1 hour; the cleaning is specifically: Al 2 o 3 The substrate was ultrasonically cleaned in deionized water for 3 minutes at room temperatu...

Embodiment 2

[0042] This example is carried out on the basis of Example 1, the difference is that: the thickness of the AlN nucleation layer (12) is 10nm, the thickness of the AlN film (13) is 150nm, and the non-uniformity is 2.61 %.

Embodiment 3

[0044] This example is carried out on the basis of Example 1, the difference is that: the thickness of the AlN nucleation layer (12) is 5nm, the thickness of the AlN film (13) is 250nm, and the non-uniformity is 1.98 %.

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Abstract

The invention relates to a high-uniformity AlN film growing on a sapphire substrate. The high-uniformity AlN film growing on the sapphire substrate comprises an Al2O3 substrate, an AlN nucleation layer and an AlN film body, wherein the AlN nucleation layer and the AlN film body sequentially grow in an epitaxial mode from the face (0001) of the Al2O3 substrate to the direction deviating from the face (10-10) by 0.2 degree. The invention further relates to a preparing method of the AlN film. The method includes the following steps that a, the Al2O3 substrate is cleaned and annealed; b, the AlN nucleation layer grows on the Al2O3 substrate treated through the step a in an epitaxial mode; c, the AlN film body grows on the AlN nucleation layer growing through the step b in an epitaxial mode. The high-uniformity AlN film growing on the sapphire substrate is used for preparing a photoelectric device of a nitride device or used as a piezoelectric film for an insulating buried layer device and an acoustic surface wave device of an SOI material. The AlN film is low in cost, high in quality, high in uniformity and wide in application range.

Description

technical field [0001] The invention relates to an AlN film and its preparation method and application, in particular to a high-uniformity AlN film grown on a sapphire substrate and its preparation method and application. Background technique [0002] Compared with traditional light sources, light-emitting diodes (LEDs) have outstanding features such as low power consumption, long life, high brightness, small size, strong adaptability and controllability, etc. It is a new type of solid-state lighting source and green light source. It has a wide range of applications in the fields of exterior lighting and decoration engineering. In the context of increasingly depleted petrochemical energy and increasingly severe global warming, energy conservation and emission reduction has become an important issue for the world. A low-carbon economy based on low energy consumption, low pollution, and low emissions will become an important direction of economic development. In the field of...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/20H01L21/268H01L33/32H01L31/0352
CPCH01L21/0242H01L21/02458H01L21/0254H01L21/0262H01L29/06H01L33/0066H01L33/0075H01L33/32
Inventor 李国强
Owner 广州市艾佛光通科技有限公司
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