LED epitaxial wafer growing on Ag substrate and preparing method and application of LED epitaxial wafer
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- 广州市众拓光电科技有限公司
- Publication Date
- 2014-08-20
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Abstract
Description
technical field
[0001] The invention relates to an LED epitaxial wafer, in particular to an LED epitaxial wafer grown on an Ag substrate, a preparation method and application thereof. Background technique
[0002] Light-emitting diode (LED), as a new type of solid-state lighting source and green light source, has outstanding features such as small size, low power consumption, environmental protection, long service life, high brightness, low heat and colorful, and is widely used in outdoor lighting, commercial lighting and decoration Engineering and other fields have a wide range of applications. At present, under the background of the increasingly serious problem of global warming, saving energy and reducing greenhouse gas emissions has become an important issue faced by the whole world. A low-carbon economy based on low energy consumption, low pollution, and low emissions will become an important direction of economic development. In the field of lighting, the application...