Ingan/gan multi-quantum well grown on strontium aluminate tantalum lanthanum substrate and its preparation method
A technology of strontium tantalum lanthanum aluminate and multiple quantum wells, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as reducing material carrier mobility, film and substrate cracking, affecting device performance, etc. Improve radiation recombination efficiency, inhibit interfacial reaction, unique effect of growth process
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Embodiment 1
[0034] A method for preparing an InGaN / GaN multiple quantum well grown on a strontium aluminate tantalum lanthanum substrate, comprising the following steps:
[0035] (1) Selection of the substrate and its crystal orientation: La 0.3 Sr 1.7 AlTaO 6 The substrate, with the (111) plane offset from the (100) direction by 0.5° as the epitaxial plane, the crystal epitaxial orientation relationship is: the (0001) plane of GaN is parallel to the La 0.3 Sr 1.7 AlTaO 6 The (111) plane of GaN(0001) / / La 0.3 Sr 1.7 AlTaO 6 (111);
[0036] (2) Substrate surface polishing, cleaning and annealing treatment:
[0037] The surface polishing of the substrate is specifically: firstly La 0.3 Sr 1.7 AlTaO 6 The surface of the substrate is polished with diamond slurry, and the surface of the substrate is observed with an optical microscope until there are no scratches, and then polished by chemical mechanical polishing;
[0038] The cleaning is specifically: La 0.3 Sr 1.7 AlTaO 6 The ...
Embodiment 2
[0047] A method for preparing an InGaN / GaN multiple quantum well grown on a strontium aluminate tantalum lanthanum substrate, comprising the following steps:
[0048] (1) Selection of the substrate and its crystal orientation: La 0.3 Sr 1.7 AlTaO 6 The substrate, with the (111) plane offset from the (100) direction by 1° as the epitaxial plane, the crystal epitaxial orientation relationship is: the (0001) plane of GaN is parallel to the La 0.3 Sr 1.7 AlTaO 6 The (111) plane of GaN(0001) / / La 0.3 Sr 1.7 AlTaO 6 (111);
[0049] (2) Substrate surface polishing, cleaning and annealing treatment:
[0050] The surface polishing of the substrate is specifically: firstly La 0.3 Sr 1.7 AlTaO 6 The surface of the substrate is polished with diamond slurry, and the surface of the substrate is observed with an optical microscope until there are no scratches, and then polished by chemical mechanical polishing;
[0051] The cleaning is specifically: La 0.3 Sr 1.7 AlTaO 6 The su...
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