LED epitaxial wafer growing on Cu substrate and preparing method and application of LED epitaxial wafer
A technology for LED epitaxial wafers and substrates, applied in the fields of final product manufacturing, sustainable manufacturing/processing, semiconductor/solid-state device manufacturing, etc., can solve the problems affecting the quality of epitaxial film growth, the difficulty of film epitaxy, and the chemical properties of metal Cu substrates Instability and other problems, to avoid high temperature interface reaction, improve internal quantum efficiency, and achieve uniform current distribution
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Embodiment 1
[0044] A method for preparing an LED epitaxial wafer grown on a Cu substrate, comprising the following steps:
[0045] 1) Selection of the substrate and its crystal orientation: Cu substrate is used, the (111) plane is used as the epitaxial plane, and the crystal epitaxial orientation relationship is: AlN[11-20] / / Cu[1-10];
[0046] 2) Polishing, cleaning and annealing of the substrate surface: first, the surface of the Cu substrate is polished with diamond slurry, and the surface of the substrate is observed with an optical microscope until there are no scratches, and then the chemical mechanical polishing method is used for polishing; Secondly, the Cu substrate was ultrasonically cleaned in deionized water at room temperature for 5 minutes to remove the dirt particles on the surface of the Cu substrate, and then washed with acetone and ethanol in order to remove the surface organic matter, and dried with high-purity dry nitrogen; finally, the Cu substrate was The substrate is...
Embodiment 2
[0060] A method for preparing an LED epitaxial wafer grown on a Cu substrate, comprising the following steps:
[0061] 1) Selection of the substrate and its crystal orientation: Cu substrate is used, the (111) plane is used as the epitaxial plane, and the crystal epitaxial orientation relationship is: AlN[11-20] / / Cu[1-10];
[0062] 2) Polishing, cleaning and annealing of the substrate surface: first, the surface of the Cu substrate is polished with diamond slurry, and the surface of the substrate is observed with an optical microscope until there are no scratches, and then the chemical mechanical polishing method is used for polishing; Secondly, the Cu substrate was ultrasonically cleaned in deionized water at room temperature for 4 minutes to remove the dirt particles on the surface of the Cu substrate, and then washed with acetone and ethanol in order to remove the surface organic matter, and dried with high-purity dry nitrogen; finally, the Cu substrate was The substrate is...
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