InGaN/GaN multi-quantum well grown on glass substrate and preparation method therefor

Abstract

The invention discloses an InGaN / GaN multi-quantum well grown on a glass substrate. The InGaN / GaN multi-quantum well comprises an aluminum metal layer grown on the glass substrate, a silver metal layer grown on the aluminum metal layer, an AlN buffer layer grown on the silver metal layer, a GaN buffer layer grown on the AlN buffer layer, a non-doped GaN layer grown on the GaN buffer layer, and an InGaN / GaN quantum well grown on the non-doped GaN layer. The invention also discloses a preparation method for the InGaN / GaN multi-quantum well grown on the glass substrate. The multi-quantum well has the advantages of simple growth process and low preparation cost; and in addition, the prepared InGaN / GaN multi-quantum well is low in defect density, good in crystal quality, and good in electrical and optical performance.

Description

technical field [0001] The invention relates to an InGaN / GaN multi-quantum well and a preparation method, in particular to an InGaN / GaN multi-quantum well grown on a glass substrate and a preparation method. Background technique [0002] Light-emitting diode (LED), as a new type of solid-state lighting source and green light source, has outstanding features such as small size, low power consumption, environmental protection, long service life, high brightness, low heat and colorful, and is widely used in outdoor lighting, commercial lighting and decoration Engineering and other fields have a wide range of applications. At present, under the background of the increasingly serious problem of global warming, saving energy and reducing greenhouse gas emissions has become an important issue faced by the whole world. A low-carbon economy based on low energy consumption, low pollution, and low emissions will become an important direction of economic development. In the field of l...

AI Technical Summary

Problems solved by technology

Although the luminous efficiency of LED has surpassed that of fluorescent lamps and incandescent lamps, the luminous efficiency of commercial LEDs is still lower than that of sodium lamps (150lm / W), and the price per lumen / watt is relatively high.

At present, most GaN-based LEDs are based on epitaxial growth on sapphire and SiC substrates. Large-scale sapphire and SiC substrates are expensive, resulting in high LED manufacturing costs.

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