A kind of gan thin film grown on metal al substrate and its preparation method and application
A substrate and metal technology is applied in the field of metal organic chemical vapor deposition method to synthesize films, which can solve the problems of difficult film epitaxy, unstable chemical properties of metal Al substrates, affecting the quality of epitaxial film growth, etc., so as to shorten the nucleation time. , The effect of improving internal quantum efficiency and excellent thermal conductivity
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Embodiment 1
[0040] Such as figure 1 As shown, the GaN film grown on the metal Al substrate shown in the present invention includes an Al substrate 1, and the (111) plane of the Al substrate is the Al grown on the epitaxial surface. 2 o 3 protective layer 2 as well as the Al 2 o 3 GaN film layer 3 epitaxially grown on protective layer 2, wherein Al 2 o 3 The crystal epitaxial orientation relationship between protective layer 2 and GaN thin film layer 3 is GaN(0001) / / Al 2 o 3 (0001) / / Al(111); The GaN thin film grown on the metal Al substrate is prepared by the following method:
[0041] 1) Substrate treatment: select metal Al as the substrate, firstly polish the surface of the Al substrate with diamond slurry, observe the surface of the substrate with an optical microscope and when there is no scratch, then use the method of chemical mechanical polishing to polish the substrate Perform polishing treatment; then put the substrate into deionized water and ultrasonically clean it at roo...
Embodiment 2
[0045] The difference from Example 1 is that the GaN thin film is prepared by the following method:
[0046] 1) Substrate treatment: select metal Al as the substrate, firstly polish the surface of the Al substrate with diamond slurry, observe the surface of the substrate with an optical microscope and when there is no scratch, then use the method of chemical mechanical polishing to polish the substrate Perform polishing treatment; then put the substrate into deionized water and ultrasonically clean it at room temperature for 5 minutes to remove the dirt particles on the surface of the Al substrate, and then wash with hydrochloric acid, acetone, and ethanol in sequence to remove surface organic matter; the cleaned substrate is washed with high Blow dry with pure dry nitrogen; then place the substrate Al at a pressure of 2×10 -10 In the growth chamber of Torr’s UHV-PLD, bake at a high temperature of 550 ° C for 1 hour to remove pollutants on the substrate surface, and then air c...
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