Doped gan thin film grown on strontium aluminate tantalum lanthanum substrate and preparation method thereof
A strontium tantalum lanthanum aluminate and thin film technology is applied in the field of doped GaN thin films and their preparation, which can solve the problems of insufficient luminous efficiency of LED chips, affecting the performance of GaN-based devices, reducing material carrier mobility, and the like. Repeatability, suppression of interfacial reactions, effect of low film dislocation density
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Embodiment 1
[0035] In this embodiment, the method for preparing a doped GaN thin film grown on a strontium aluminate tantalum lanthanum substrate includes the following steps:
[0036] (1) Selection of substrate and its crystal orientation: (1) Selection of substrate and its crystal orientation: La 0.x Sr 1.7 AlTaO 6 The substrate, with the (111) plane offset from the (100) direction by 0.5° as the epitaxial plane, the crystal epitaxial orientation relationship is: the (0001) plane of GaN is parallel to the La 0.3 Sr 1.7 AlTaO 6 The (111) plane of GaN(0001) / / La 0.3 Sr 1.7 AlTaO 6 (111);
[0037] (2) Surface polishing, cleaning, and annealing of the substrate. The specific process of the annealing is: put the substrate into the annealing chamber, and treat La 0.3 Sr 1.7 AlTaO 6 The substrate was annealed for 3 hours and then air-cooled to room temperature;
[0038] The surface polishing of the substrate is specifically:
[0039] La 0.3 Sr 1.7 AlTaO 6 The surface of the subst...
Embodiment 2
[0050] In this embodiment, the method for preparing a doped GaN thin film grown on a strontium aluminate tantalum lanthanum substrate includes the following steps:
[0051] (1) Selection of substrate and its crystal orientation: (1) Selection of substrate and its crystal orientation: La 0.3 Sr 1.7 AlTaO 6 The substrate, with the (111) plane offset from the (100) direction by 1° as the epitaxial plane, the crystal epitaxial orientation relationship is: the (0001) plane of GaN is parallel to the La 0.3 Sr 1.7 AlTaO 6 (111) side;
[0052] (2) Surface polishing, cleaning, and annealing of the substrate. The specific process of the annealing is: put the substrate into the annealing chamber, and treat La 0.3 Sr 1.7 AlTaO 6 The substrate was annealed for 5 hours and then air-cooled to room temperature;
[0053] The surface polishing of the substrate is specifically:
[0054] La 0.3 Sr 1.7 AlTaO 6 The surface of the substrate is polished with diamond slurry, and the surfac...
Embodiment 3
[0064] In this embodiment, except the following features, all the other features are the same as in Embodiment 1:
[0065] The growth process of n-type doped GaN film is as follows: using molecular beam epitaxy growth process, the substrate temperature is raised to 750°C, and the reaction chamber pressure is 6.0×10 -5 Pa, V / III value is 50, and Si is used as n-type dopant source, and the growth rate is 0.8ML / s. The electron concentration of the n-type doped GaN film prepared in this example is 6×10 18 cm -3 , with an electron mobility of 310 cm 2 / v·s.
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