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InGaN/GaN multiple quantum well nano-pillar grown on silicon/graphene composite substrate and preparation method thereof

A graphene composite, multi-quantum well technology, applied in semiconductor/solid-state device fabrication, phonon exciter, active region structure, etc., can solve the limitation of Si substrate LED development, large lattice mismatch thermal mismatch and other problems, to achieve the effect of convenient fabrication of vertical devices, improved crystal quality, and small value of half-peak width.

Inactive Publication Date: 2018-12-14
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is a large lattice mismatch (-16.9%) and thermal mismatch (54%) between the Si substrate and GaN, which limits the development of Si substrate LEDs.

Method used

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  • InGaN/GaN multiple quantum well nano-pillar grown on silicon/graphene composite substrate and preparation method thereof
  • InGaN/GaN multiple quantum well nano-pillar grown on silicon/graphene composite substrate and preparation method thereof

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Embodiment 1

[0037] The preparation method of the InGaN / GaN multi-quantum well nano-column grown on the Si / graphene composite substrate of the present embodiment comprises the following steps:

[0038] (1) Selection of the substrate and its crystal orientation: the substrate used is Si(111), polished on one side, and the thickness is 400±20μm;

[0039] (2) Substrate surface cleaning treatment: first, in carbon tetrachloride, toluene, acetone, absolute ethanol, respectively clean 3 times successively, each cleaning 3 minutes, remove the organic pollutant of Si substrate surface, use after Rinse with deionized water for 3 times; secondly, in the newly prepared H 2 SO 4 :H 2 o 2 (mass ratio is 1:1) in the solution for 3 minutes and then rinsed with 70°C deionized water for 3 times; finally, in HF:H 2 O (mass ratio: 1:10) solution was etched for 3 minutes, rinsed with deionized water and dried with high-purity dry nitrogen.

[0040] (3) Preparation of Si / graphene composite substrate: cut ...

Embodiment 2

[0047] The preparation method of the InGaN / GaN multi-quantum well nano-column grown on the Si / graphene composite substrate of the present embodiment comprises the following steps:

[0048] (1) Selection of the substrate and its crystal orientation: the substrate used is Si(111), polished on one side, and the thickness is 400±20μm;

[0049] (2) Substrate surface cleaning treatment: first, in carbon tetrachloride, toluene, acetone, absolute ethanol, respectively clean 3 times successively, each cleaning 3 minutes, remove the organic pollutant of Si substrate surface, use after Deionized water was ultrasonicated 3 times, 2 minutes each time; secondly, in the newly prepared H 2 SO 4 :H 2 o 2 (mass ratio is 1:1) in the solution for 3 minutes, then ultrasonicated 3 times with 70°C deionized water, 2 minutes each time; finally, in HF:H 2 O (mass ratio: 1:10) solution was etched for 3 minutes, and then deionized water was used to sonicate 3 times, 2 minutes each time, rinsed and d...

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Abstract

The invention discloses an InGaN / GaN multiple quantum well nano column grown on a silicon / graphene composite substrate and a preparation method thereof, the InGaN / GaN multiple quantum well nano-pillarcomprises a Si / graphene composite substrate, n-type doped GaN nanoparticles grown on Si / graphene composite substrates, InGaN / GaN multiple quantum wells grown on top of n-type doped GaN nanoparticles,p-type doped GaN nanoparticles grown on top of InGaN / GaN multiple quantum wells. The preparation method of the invention has the advantages of simple growth process and low preparation cost, and theprepared InGaN / GaN multiple quantum well nano-pillar has low defect density, good crystal quality, good electrical and optical performance.

Description

technical field [0001] The invention relates to the field of InGaN / GaN multi-quantum well nanocolumns, in particular to an InGaN / GaN multiquantum well nanocolumn grown on a silicon / graphene composite substrate and a preparation method thereof. Background technique [0002] Light-emitting diode (LED), as a new type of solid-state lighting source and green light source, has outstanding features such as small size, low power consumption, environmental protection, long service life, high brightness, low heat and colorful, and is widely used in outdoor lighting, commercial lighting and decoration Engineering and other fields have a wide range of applications. At present, under the background of the increasingly serious problem of global warming, saving energy and reducing greenhouse gas emissions has become an important issue faced by the whole world. A low-carbon economy based on low energy consumption, low pollution, and low emissions will become an important direction of econ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L31/0304H01L33/06H01L33/32H01S5/30
CPCH01L21/02376H01L21/02381H01L21/0254H01L21/0259H01L21/02603H01L31/03044H01L33/06H01L33/32H01S5/3013
Inventor 李国强高芳亮张曙光徐珍珠余粤锋
Owner SOUTH CHINA UNIV OF TECH
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