Gan film grown on strontium aluminate tantalum lanthanum substrate and its preparation method and application
A technology of strontium tantalum lanthanum aluminate and substrate, applied in the field of GaN thin film and its preparation, can solve the problems of reducing material carrier mobility, film and substrate cracking, affecting device performance, etc., and achieves carrier radiation. High compounding efficiency, repeatability, unique effect of growth process
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Embodiment 1
[0037] A method for preparing a GaN thin film grown on a strontium aluminate tantalum lanthanum substrate, comprising the following steps:
[0038] (1) Selection of the substrate and its crystal orientation: La 0.3 Sr 1.7 AlTaO 6 The substrate, with the (111) plane offset from the (100) direction by 0.5° as the epitaxial plane, the crystal epitaxial orientation relationship is: the (0001) plane of GaN is parallel to the La 0.3 Sr 1.7 AlTaO 6 The (111) surface.
[0039] (2) Surface polishing, cleaning and annealing of the substrate. The specific process of the annealing is: put the substrate into the annealing chamber, and treat La 0.3 Sr 1.7 AlTaO 6 The substrate was annealed for 3 hours and then air-cooled to room temperature;
[0040] The surface polishing of the substrate is specifically:
[0041] La 0.3 Sr 1.7 AlTaO 6 The surface of the substrate is polished with diamond slurry, and the surface of the substrate is observed with an optical microscope until there...
Embodiment 2
[0055] A method for preparing a GaN thin film grown on a strontium aluminate tantalum lanthanum substrate, comprising the following steps:
[0056] (1) Selection of the substrate and its crystal orientation: La 0.3 Sr 1.7 AlTaO 6 The substrate, with the (111) plane offset from the (100) direction by 1° as the epitaxial plane, the crystal epitaxial orientation relationship is: the (0001) plane of GaN is parallel to the La 0.3 Sr 1.7 AlTaO 6 The (111) surface.
[0057] (2) Substrate surface polishing, cleaning and annealing treatment. The specific process of the annealing is: put the substrate into the annealing chamber, and treat La 0.3 Sr 1.7 AlTaO 6 The substrate was annealed for 5 hours and then air-cooled to room temperature;
[0058] The surface polishing of the substrate is specifically:
[0059] La 0.3 Sr 1.7 AlTaO 6 The surface of the substrate is polished with diamond slurry, and the surface of the substrate is observed with an optical microscope until ther...
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