Method for detecting abnormity of mechanical arm of detector

A robotic arm and inspection machine technology, applied in semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., can solve the problem of inability to effectively monitor the abnormal changes of the robotic arm in real time, and achieve the effect of ensuring yield

Inactive Publication Date: 2014-09-03
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF7 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The present invention solves the problem that the existing technology cannot effectively monitor the subtle abnormal changes of t

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for detecting abnormity of mechanical arm of detector
  • Method for detecting abnormity of mechanical arm of detector
  • Method for detecting abnormity of mechanical arm of detector

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0031] The present invention will be further described below with reference to the drawings and specific embodiments, but it is not a limitation of the present invention.

[0032] Such as Figure 1 to 8 As shown, the present invention provides a method for detecting abnormality of a machine arm, including the following steps:

[0033] Step 1. Use the wafer edge inspection machine to detect the edge of the wafer control wafer to obtain the first image (such as image 3 , Figure 5 with Figure 7 As shown in the first image of the upper surface edge a, the side edge b, and the lower surface edge c), a low-resistance material layer is grown on the outer surface of the wafer controller, and the thickness of the low-resistance material layer is a fixed value;

[0034] Step 2. Repeat the transfer test of the wafer control sheet through the robot arm of the machine to be inspected (ie: place the wafer control sheet in the machine to be inspected and do repeated transfer test between the rob...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for detecting abnormity of a mechanical arm of a detector, relating to the semiconductor field. The method comprises the steps that 1) the wafer edge detector detects the edge of a control wafer to obtain a first image; 2) a transmission test is repeatedly carried out on the control wafer via the mechanical arm of the detector to be detected to determine whether the mechanical arm is abnormal, if yes, the transmission test is stopped, and if no, a step 3) is implemented; 3) the wafer edge detector detects the edge of the control wafer after repeated transmission tests to obtain a second image; and 4) whether the mechanical arm is abnormally is determined according to the first and second images. The method can be used to effectively monitor working states of the mechanical arm in real time, if the mechanical arm is detected to be abnormal, the mechanical arm can be further inspected timely and effectively, and thus, the yield rate of products is ensured.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for detecting the edge of a wafer control chip by using a wafer edge detection machine to obtain abnormality of a mechanical arm. Background technique [0002] With the continuous improvement of integrated circuit technology, more and more chips can be produced per unit area, and the wafer size is getting larger and larger. The precision requirements for production machines are also gradually increasing, especially in terms of the mechanical arm of the machine. Once there is a problem with the accuracy of the mechanical arm, it is very easy to cause abnormal contact between the wafer and the mechanical arm, resulting in scratch defects, and further caused by scratches. The induced grain defects cause defects in the normal chip product area of ​​the wafer. At present, in order to ensure the normal operation and stability of the robotic arm in wafer production enterprises, t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/66
CPCH01L22/10
Inventor 朱陆君倪棋梁龙吟陈宏璘
Owner SHANGHAI HUALI MICROELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap