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A fast soft recovery power switch diode and its preparation method

A power switch and soft recovery technology, which is applied in the fields of final product manufacturing, sustainable manufacturing/processing, semiconductor/solid-state device manufacturing, etc., can solve the problems of large reverse recovery peak current and long reverse recovery time, and achieve small positive The effect of direct conduction voltage drop, small power loss, and reduced circuit burnout

Active Publication Date: 2016-06-01
西安国创电子股份有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a fast soft recovery power switching diode, which solves the problems of excessive reverse recovery peak current and long reverse recovery time of traditional PiN diodes in the prior art

Method used

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  • A fast soft recovery power switch diode and its preparation method
  • A fast soft recovery power switch diode and its preparation method
  • A fast soft recovery power switch diode and its preparation method

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Embodiment Construction

[0044] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0045] Such as figure 2 As shown, the structure of the existing power switching diode (PiN diode) is that P + Anode area, N - pressure layer and N + cathode area.

[0046] Such as image 3 As shown, the fast soft recovery power switching diodes of the present invention are arranged with P in turn from top to bottom + Anode region 1, super junction part 2, N -Layer 3 (superjunction part 2, N - Layer 3 is collectively referred to as the pressure-resistant layer) and N + P + N + The cathode region 4 is entirely made of silicon material; wherein, the super junction part 2 is composed of N pillars and P pillars arranged in half, and the N pillars and P pillars are arranged along the lateral direction, and the N pillars and P pillars of the super junction part 2 are provided with at least one right.

[0047] where P + The doping concen...

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Abstract

The invention discloses a rapid soft recovery power switching diode. The rapid soft recovery power switching diode is sequentially provided with a P<+> anode region, a super junction part, an N<-> layer, and an N<+>P<+>N<+> cathode region, wherein the super junction part consists of N columns and P columns, the N columns and the P columns are crossly arranged in a half-and-half mode, and the super junction part is provided with at least one pair of an N column and a P column. The invention further discloses a manufacture method of the rapid soft recovery power switching diode. According to the rapid soft recovery power switching diode and the manufacture method thereof, reverse recovery peak current of the diode is greatly reduced by comparison to a conventional PiN diode, reverse blocking features and forward breakover features are greatly improved, and the diode is better applicable to high frequency circuits.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and relates to a fast soft recovery power switch diode, and also relates to a preparation method of the fast soft recovery power switch diode. Background technique [0002] The development of power semiconductor devices, especially the emergence and application of new devices, will occupy different related fields with their own unique characteristics, so that the scope of application will continue to expand. At the same time, the development of power electronics technology puts forward higher requirements for devices, which will promote the improvement of device performance and the research and development of new devices. [0003] Under many working conditions, many devices require an anti-parallel diode to provide a freewheeling channel, reduce the charging and discharging time of the capacitor, and suppress the high voltage induced by the instantaneous reverse of the load cu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/861H01L29/06H01L21/329
CPCH01L29/0619H01L29/0634H01L29/66121H01L29/8613Y02P70/50
Inventor 马丽谢加强高勇王秀慜
Owner 西安国创电子股份有限公司
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