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T-shaped multi-level inverter circuit based on reverse blocking IGBT antiparallel connection

A multi-level inverter and anti-resistance technology, which is applied in the direction of electrical components, output power conversion devices, AC power input conversion to DC power output, etc., can solve switching frequency reduction, level lag, and level output. Independence and other issues, to achieve the effect of improving harmonic distortion, reducing switching frequency, and facilitating expansion

Active Publication Date: 2014-09-10
JIANGSU WEIFAN INTELLIGENT ELECTRICAL TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In summary, the T-type level inverter in the prior art has technical problems such as not independent level output and easy harmonic distortion, which leads to reduced switching frequency, complex control implementation, and lag in level generation.

Method used

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  • T-shaped multi-level inverter circuit based on reverse blocking IGBT antiparallel connection
  • T-shaped multi-level inverter circuit based on reverse blocking IGBT antiparallel connection
  • T-shaped multi-level inverter circuit based on reverse blocking IGBT antiparallel connection

Examples

Experimental program
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Effect test

Embodiment 1

[0050] Embodiment 1 is a T-type five-level inverter circuit based on anti-resistance IGBT antiparallel connection.

[0051] Such as figure 1 with figure 2 As shown, when n is equal to 1, it includes 3 extension units to form a T-type five-level inverter circuit based on anti-resistance IGBT anti-parallel connection, and a T-type five-level inverter circuit structure based on anti-resistance IGBT anti-parallel connection for:

[0052] Since the T-type five-level inverter circuit based on the anti-parallel connection of the anti-resistance IGBT includes 3 expansion units, 1 terminal DC capacitor and 1 terminal power device, there are 3 bidirectional controllable switches, 4 DC capacitors and There are 4 power devices, and the specific structure is described as follows.

[0053] The bidirectional controllable switch 1 includes a first bidirectional controllable switch composed of a first anti-resistance type IGBT Q5 and a second anti-resistance type IGBT Q6 connected in anti-...

Embodiment 2

[0065] Embodiment 2, forming a T-type seven-level inverter circuit based on anti-parallel connection of anti-resistance IGBTs.

[0066] Such as Figure 5 As shown, when n is equal to 2, 5 expansion units are included to form a T-type seven-level inverter circuit based on anti-resistance IGBT anti-parallel connection. Among the 5 expansion units, the second access terminal of the previous expansion unit is connected to The first access end of the adjacent extension unit, the second access end of the second extension unit is connected to the first access end of the first extension unit, and the second extension access end of the first extension unit is connected in series to the endpoint DC The capacitor C6 and the terminal power device Q6-D6 form a loop, and the first access end of the fifth extension unit is directly connected to form a loop. The bus bar (voltage input voltage) between the positive and negative poles of the DC side is the voltage at both ends of C1 and C6, an...

Embodiment 3

[0069] Embodiment 3, forming a T-type nine-level inverter circuit based on anti-parallel connection of anti-resistance IGBTs.

[0070] Such as Image 6 As shown, when n is equal to 3, including 7 expansion units, a T-type nine-level inverter circuit based on anti-resistance IGBT anti-parallel connection is formed. Among the 7 expansion units, the second access terminal of the previous expansion unit is connected to the phase Adjacent to the first access end of the extension unit, the second access end of the second extension unit is connected to the first access end of the first extension unit, and the second extension access end of the first extension unit is connected in series with the terminal DC capacitor C8 and the terminal power device Q8-D8 form a loop, and the first access end of the seventh extension unit is directly connected to form a loop. The bus bar (voltage input voltage) between the positive and negative poles of the DC side is the voltage at both ends of C1 ...

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PUM

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Abstract

The invention discloses a T-shaped multi-level inverter circuit based on reverse blocking IGBT (Insulated Gate Bipolar Transistor) antiparallel connection. The T-shaped multi-level inverter circuit comprises a two-way controllable switch (1), a power device (2) and a direct-current capacitor (3); the two-way controllable switch (1) comprises a plurality of reverse blocking IGBTs which are in antiparallel connection with each other in pairs; one side of a connecting wire of the reverse blocking IGBTs in antiparallel connection with each other in pairs after being connected in parallel is connected with a power switch tube, while the other side of the connecting wire is connected with the direct-current capacitor (3). The T-shaped multi-level inverter circuit is characterized in that after the reverse blocking IGBTs are in antiparallel connection with each other to form the two-way controllable switch, the antiparallel reverse blocking IGBTs are connected at the midpoints of a plurality of series capacitors without increasing the conduction loss, and then a plurality of midpoint voltage clamping circuits to realize five-level outputs, and with the increase of the number of output levels, the harmonic distortion of an output voltage is improved, the desired filter inductance is lower or the switching frequency can be reduced accordingly.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to a T-type multilevel inverter circuit based on anti-parallel connection of anti-resistance IGBTs. Background technique [0002] Ordinary IGBTs cannot achieve reverse voltage blocking, and generally require anti-parallel freewheeling diodes, and add an RC snubber circuit to realize a multi-level circuit, which increases the complexity of the circuit structure, high cost, and complicated wiring; for example, the patent CN103731057 discloses The present invention discloses a T-type three-level inverter, comprising input voltage, switching tube Q1, switching tube Q2, switching tube Q3, switching tube Q4, switching tube Q5, switching tube Q6 and an output load, and the input voltage is connected in parallel There is an absorption circuit, which can divide the voltage into three levels of 0, U / 2, and -U / 2 by adjusting six switching tubes. This application is limited to the res...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M7/487
CPCH02M7/487
Inventor 邹积勇杨婷杨志杨立军
Owner JIANGSU WEIFAN INTELLIGENT ELECTRICAL TECH
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