The invention discloses a CMOS radio frequency (RF) switch based on silicon-on-insulator (SOI) technology, which has the circuit structure adopting two-stage type closing isolation structure and two-stage type current release path structure, and utilizes a high resistance substrate and a buried oxide layer of an SOI technical device, thus remarkably reducing crosstalk and minimized parasitic capacitance, better screening substrate noise, obtaining ideal insertion loss and insulation performance at the two ends of the switch, inhibiting nonlinear effect and reducing harmonic distortion. The RFswitch has the circuit structure, reduces the channel resistance of a transistor connected in series, reduces the insertion loss, and further improves the closing performance of a transmitting terminal and a receiving terminal; furthermore, the switch can improve the insulation, leads harmonic quantity of every time to be in good grounding, improves the harmonic current of the substrate and inhibits harmonic component.