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Graphite bearing tray capable of regulating and controlling local temperature field

A technology of carrier plate and local temperature, which is used in semiconductor devices, electrical components, circuits, etc.

Active Publication Date: 2014-09-17
QUANZHOU SANAN SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Taking GaN-based LEDs as an example, due to the large lattice mismatch and thermal mismatch between the sapphire wafer substrate and the GaN epitaxial layer, during the epitaxial growth process , the substrate will warp, especially the warpage of the 4-inch substrate is more serious, resulting in high dispersion of temperature field distribution at different positions of the epitaxial wafer, for example, the temperature at the flat edge position is low, causing the flat edge position Problems such as long wavelength, low STD yield, and surface black holes lead to low epitaxy yield and chip yield
Therefore, it is difficult to precisely control the local temperature field by using the traditional graphite carrier plate, and it is difficult to obtain LED epitaxial wafers with good uniformity and yield.

Method used

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  • Graphite bearing tray capable of regulating and controlling local temperature field
  • Graphite bearing tray capable of regulating and controlling local temperature field
  • Graphite bearing tray capable of regulating and controlling local temperature field

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] refer to Figure 2~Figure 3 As shown, the graphite carrier plate that can adjust the local temperature field includes: 14 4-inch (about 100.7mm in diameter) wafer grooves 1 (arranged in two circles, the inner and outer circles, and the circles passing through the center of each wafer groove in the inner and outer rings. Concentric circle relationship), the edge 2 of the graphite carrier plate and the shaft hole 3 arranged in the center of the graphite carrier plate, wherein the wafer groove 1 is arranged above the carrier plate for placing a wafer substrate 4 with a flat edge 5 , and at least two slotted structures 6 are provided on the back of the wafer groove (preferably, the number of slots is consistent with the number of turns of the wafer groove), and the slotted structure is concentric with the graphite carrier plate circle relationship.

[0039] In order to precisely control the temperature at the flat edge position, the slotted structure of the graphite carrie...

Embodiment 2

[0046] refer to Figure 6 As shown, the difference from Embodiment 1 is that Embodiment 1 achieves temperature field balance by increasing the temperature of the local area of ​​the graphite carrier plate, while this embodiment only arranges the slotted structure 6 on the back side of the wafer groove, but does not Filled with thermally conductive material, the slot structure is located below the wafer substrate and close to the center of the graphite carrier plate, so that the temperature field balance can be achieved by reducing the temperature of the local area of ​​the graphite carrier plate, thereby improving the uniformity of the temperature field of the epitaxial wafer On the premise of wavelength uniformity, the manufacturing process is simplified and the manufacturing cost is reduced.

Embodiment 3

[0048] refer to Figure 7 As shown, the difference from Example 2 is that in this embodiment, after the grooved structure is arranged on the back side of the wafer groove, the low thermal conductivity material 8 with a thermal conductivity lower than that of the graphite carrier plate is filled, and the low thermal conductivity material can be selected from ceramics or carbon fibers. Reinforced phenolic resin or polytetrafluoroethylene, carbon fiber reinforced phenolic resin is preferred in this embodiment, and the filling is realized by bonding. This embodiment can effectively overcome the difficulty that the traditional graphite disk cannot control the local temperature field. By reducing the heat conduction in the local area, the uniformity of the temperature field can be precisely controlled, and the wavelength of the 1 / 6 area of ​​the flat side of the 4-inch substrate can be improved. , high defect density at the flat edge position, etc., effectively improving the wavelen...

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Abstract

The invention provides a graphite bearing tray capable of regulating and controlling a local temperature field. The graphite bearing tray comprises a plurality of wafer grooves which are formed above the bearing tray and used for storing epitaxial wafer substrates, one grooving structure is at least arranged on the back face of the wafer grooves, and the grooving structure and the graphite bearing tray are concentric. The grooving structure is filled with a leading-in material or only the grooving structure is arranged, the local temperature filed of the graphite bearing tray can be regulated and controlled in the epitaxial growth process, hence, the entire temperature field of the graphite bearing tray is balanced, the edge yield of epitaxial wafers is improved, and the wave length evenness and the overall yield of the epitaxial wafers are improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a graphite bearing plate capable of regulating a local temperature field. Background technique [0002] Light Emitting Diode (English for Light Emitting Diode, referred to as LED) is a solid-state semiconductor diode light-emitting device, which is widely used in lighting fields such as indicator lights and display screens. [0003] At present, LED epitaxy (Epitaxy in English) wafers are mostly obtained by Metal-organic Chemical Vapor Deposition (Metal-organic Chemical Vapor Deposition in English, MOCVD for short). bottom) into the groove of the graphite carrier (wafer carrier in English), and together with the graphite carrier, it is introduced into the MOCVD reaction chamber. The substrate and the graphite carrier are heated to a high temperature of about 1000°C, and the organic Metal compounds and Group V gases are repolymerized on the wafer substrate afte...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/683H01L33/00
CPCH01L21/67309H01L33/007
Inventor 郑锦坚伍明跃寻飞林李志明邓和清周启伦李水清
Owner QUANZHOU SANAN SEMICON TECH CO LTD
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