Light emitting diode and manufacturing method thereof

Abstract

The invention provides a light emitting diode which comprises a substrate, a first electrode and a second electrode, wherein a first semiconductor layer, an active layer and a second semiconductor layer are sequentially laminated on a surface of the substrate; the first semiconductor layer is close to the substrate; the first electrode is electrically connected with the first semiconductor layer; the second electrode is electrically connected with the second semiconductor layer; and a plurality of nanoscale holes are formed at a combining part between the surface of the substrate and the first semiconductor layer. The nanoscale holes are formed at the combining part between the substrate and the first semiconductor layer and can exert a scattering effect, and when partial light rays generated in the active layer are incident to the nanoscale holes at large angles, the nanoscale holes can change motion directions of the light rays and effectively reduce total reflection of light, so that the light extraction efficiency of the light emitting diode can be improved. The invention further provides a method for manufacturing the light emitting diode.

Description

technical field [0001] The invention relates to a light emitting diode and a manufacturing method thereof. Background technique [0002] Blue, green and white light-emitting diodes made of gallium nitride and other semiconductor materials have remarkable characteristics such as long life, energy saving, and environmental protection. They have been widely used in large-screen color displays, automotive lighting, traffic signals, multimedia displays and optical communications. And other fields, especially in the field of lighting has broad development potential. [0003] Existing light-emitting diodes generally include an N-type semiconductor layer, a P-type semiconductor layer, and an active layer disposed between the N-type semiconductor layer and the P-type semiconductor layer. When the light-emitting diode is in the working state, positive and negative voltages are applied to the P-type semiconductor layer and the N-type semiconductor layer respectively, so that the holes...

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Problems solved by technology

[0004] However, the light extraction efficiency of existing light-emitting diodes (light extraction efficiency usually refers to the efficiency at which light generated in the active layer is released from the inside of the light-emitting diode) is low, mainly because the refractive index of semiconductors is greater than that of air The large-angle light from the active layer is totally reflected at the interface between the semiconductor and the air, so that most of the large-angle light is confined inside the light-emitting diode until it is completely absorbed by the material in the light-emitting diode.

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