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Wafer pre-cleaning method before pad oxidation in active area

A pad oxidation and active area technology, applied in liquid cleaning methods, chemical instruments and methods, cleaning methods and utensils, etc., can solve the problems of high cost and low cleanliness, and achieve low cost and improved cleanliness , the effect of improving the yield rate

Active Publication Date: 2018-02-13
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a wafer pre-cleaning method before active region pad oxidation, which is used to solve the problem of low cleanliness and high cost of the wafer pre-cleaning method in the prior art. The problem

Method used

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  • Wafer pre-cleaning method before pad oxidation in active area
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  • Wafer pre-cleaning method before pad oxidation in active area

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Embodiment 1

[0033] Such as Figure 2 to Figure 7 As shown, the present invention provides a method for pre-cleaning wafers before active region pad oxidation, and the method at least includes the following steps:

[0034] Step 1), see figure 2 , as shown in the figure, a wafer 1 is provided, the wafer 1 is a wafer to be cleaned, and there are a number of impurity particles 2 on its surface. The impurity particles may include organic matter, metal particles and other components, and the particle size of the impurity particles is generally about 1 micron or even smaller. It should be pointed out that, for the convenience of illustration, the proportion of impurity particles is not drawn according to the actual scale.

[0035] Then, the wafer 1 is placed in the reaction chamber, and a machine table capable of carrying the wafer is provided in the reaction chamber. The machine table can rotate at different speeds according to different settings, or it can not rotate. At least one chemical...

Embodiment 2

[0048] Embodiment 2 adopts basically the same technical solution as Embodiment 1, and the difference lies in that the cleaning processes of the two are different. In embodiment one, only once O was carried out before SC1 solution cleaning. 3 Oxidation and dilute hydrofluoric acid corrosion process, while in this example, before the SC1 solution cleaning step was repeated O 3 Oxidation and dilute hydrofluoric acid corrosion process at least once. Multiple times of oxidation and corrosion can further improve the cleanliness of the wafer.

[0049] The invention provides a method for pre-cleaning wafers before pad oxidation in an active region, the method at least comprising the following steps:

[0050] Step 1), providing a wafer, placing the wafer in the reaction chamber;

[0051] Step 2), spraying O on the wafer 3 aqueous solution to remove organic impurities on the wafer and form an oxide layer on the wafer;

[0052] Step 3), and then spraying diluted hydrofluoric acid on...

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Abstract

The invention provides a wafer pre-cleaning method before oxidation of an active region pad. The method at least comprises the following steps that a wafer is provided, and the wafer is arranged in a reaction cavity; O3 water solution is sprayed on the wafer so that organic impurities on the wafer are removed and an oxide layer is formed on the wafer; then dilute hydrofluoric acid is sprayed on the wafer so that the oxide layer is dissolved and impurity particles on the wafer are removed; then O3 water solution is sprayed on the wafer so that the oxide layer is formed on the wafer again; and finally SC1 solution is sprayed on the wafer so that the impurity particles on the wafer are further removed. According to the wafer pre-cleaning method before oxidation of the active region pad, cleanliness of the wafer can be substantially enhanced, enhancement of product yield rate is facilitated, and wafer cleaning cost is substantially reduced.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and relates to a method for processing a wafer, in particular to a method for pre-cleaning a wafer before pad oxidation in an active region. Background technique [0002] Currently, the semiconductor manufacturing industry mainly grows devices, such as complementary metal-oxide-semiconductor (CMOS) devices, on the wafer device side of a silicon substrate. CMOS devices play an important role in semiconductor technology for microprocessors, flash memory, and application-specific integrated circuits (ASICs). Now the double-well CMOS process is commonly used to simultaneously fabricate a p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) whose conduction channel is a hole and an n-channel MOSFET whose conduction channel is an electron on a silicon substrate. The general steps It is: firstly, doping different regions in the silicon substrate, so that the silicon substrate ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/67B08B3/08
CPCH01L21/0206
Inventor 胡春周刘焕新袁竹根
Owner SEMICON MFG INT (SHANGHAI) CORP