Electric fuse structure and formation method thereof

Abstract

Provided is an electric fuse structure and a formation method thereof. The electric fuse structure comprises a substrate, a first conductive layer which is arranged on the surface of the substrate, a layer-to-layer dielectric layer which covers the first conductive layer and the substrate, a first conductive plug which is arranged on the surface of the first conductive layer and penetrates through the layer-to-layer dielectric layer, and a second conductive layer which is arranged on the surfaces of the first conductive plug and the layer-to-layer dielectric layer. The surfaces of the bottom parts of the first conductive layer and the first conductive plug are partially contacted, or the surfaces of the top parts of the second conductive layer and the first conductive plug are partially contacted. The first conductive plug is partially contacted with the first conductive layer and the second conductive layer, and the partially contacted positions are higher in resistance, higher in electric field intensity and higher in electro-migration rate so that the partially contacted positions are more liable to be fused, fusing time is shortened and control is easier.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to an electric fuse structure and a forming method thereof. Background technique [0002] With the continuous reduction of feature size, semiconductor devices are more and more susceptible to the influence of impurities or defects in the silicon substrate, and the failure of a single diode, MOS transistor, or memory cell often leads to the failure of the entire integrated circuit chip. In order to solve the above problems and improve the yield, some redundant circuits are often formed in the integrated circuit chip. When the manufacturing process is completed and it is found that some devices cannot work normally, the fuse can be used to electrically isolate the failed circuit from other circuit modules, and the redundant circuit can be used to replace the original failed circuit. Especially in the manufacturing process of memory, due to the large number of memory cells, it is inevita...

AI Technical Summary

Problems solved by technology

Due to the high destructiveness of laser cutting, in order to ensure that other devices in the chip are not indirectly damaged during cutting, there must be a large enough space between the cut metal fuse and other devices, and the chip needs to be repaired after cutting. The fusing process is more complicated, which is not conducive to the miniaturization of the chip

For polysilicon fuses, as the size of MOS devices continues to decrease, the CMOS process gradually transitions from polysilicon gate technology to metal gate technology. The formation of polysilicon fuses in integrated circuits is not compatible with metal gate technology, requiring additional process steps and process costs

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