Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Impedance frequency select surface

A frequency-selective surface and resistance technology, applied in waveguide devices, electrical components, circuits, etc., can solve the problems of restricted housing structure shape, steep frequency selection characteristics, etc., to achieve design and effective reduction, increase design freedom , the effect of low backscattering

Inactive Publication Date: 2014-10-15
10TH RES INST OF CETC
View PDF2 Cites 25 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] The present invention aims at the deficiencies of the existing frequency selective surface technology, and proposes an impedance type frequency selective surface that can freely design the reflection and transmission coefficients, which can realize the control and reduction of the stop band reflection coefficient, thereby solving the current problem. The frequency-selective surface is limited by technical problems such as the structure and shape of the cover in the application of the stealth radome, and provides a new technical means for achieving a steeper frequency-selective characteristic

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Impedance frequency select surface
  • Impedance frequency select surface
  • Impedance frequency select surface

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] refer to figure 1 . In the embodiments described below, the impedance-type frequency selective surface is composed of a frequency selective surface layer 1 , a dielectric spacer layer 2 , and a resistive loading layer 3 . Wherein, the dielectric spacer layer 2 is made of dielectric materials such as foam, glass fiber reinforced plastic, and polytetrafluoroethylene with low loss. The frequency selective surface layer 1 composed of a single layer or multiple periodic metal patterns is attached to the dielectric spacer layer 2, and the outermost frequency selective surface layer 1 is composed of its periodic metal patterns to realize the capacitive and inductive loading of the incident electromagnetic wave , to achieve the purpose of designing the transmission characteristics from the frequency. The dielectric spacer layer 2 located on the inner surface of the frequency selective surface layer 1 may also include a certain support material or structure; the resistance loadi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an impedance frequency select surface. A frequency select surface layer (1) leads in a dielectric spacer layer (2) and a resistance loading layer (3) which are constructed with a dissipative network; the resistance loading layer (3) and the isolation matching layer equivalently and electrically load the network and are in cascade connection with the frequency select surface layer; the frequency select surface layer and the resistance loading layer are attached to the dielectric spacer layer; the frequency select surface layer loads incident wave and electromagnetic wave capacitance and inductance, and leads in reflection loss; the resistance loading layer loads incident wave and electromagnetic wave resistance of the impedance frequency select surface layer; and the dielectric spacer layer is matched with the loaded resistance, the loaded capacitance and the loaded inductance. The impedance frequency select surface leads in the dielectric spacer layer and the resistance loading layer, so that limitation that a stop frequency band of the existing frequency select surface has the total reflection characteristic is eliminated; the stop frequency band is reduced effectively; and the technical problem that an RCS (Radar Cross Section) of the existing frequency select surface radome is limited to the structure shape is solved. The impedance frequency select surface can serve as RCS control of a spatial filter and a radome.

Description

technical field [0001] The invention relates to an impedance type frequency selective surface which is applied in the fields of antenna radar scattering cross section (RCS) control and electromagnetic shielding, and whose wave transmission and reflection characteristics can be comprehensively designed. Compared with the existing frequency selective surface, the impedance type frequency selective surface has better application effect. Background technique [0002] Frequency Select Surface is a single-screen or multi-screen periodic array structure composed of a large number of passive resonant units, which is composed of periodically arranged conductive patch units or periodically arranged aperture units on a conductive screen. This surface can be totally reflective (patch type) or fully transmissive (aperture type) near the cell's resonant frequency. Metal patch arrays arranged periodically along one-dimensional or two-dimensional directions or aperture arrays on metal plane...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01P1/20
Inventor 陈毅乔何海丹孙冰冰
Owner 10TH RES INST OF CETC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products