Plasma reaction chamber for realizing fast reaction gas switching and method thereof

Abstract

The invention discloses a plasma reaction chamber for realizing fast reaction gas switching and a method thereof. By adopting the technical scheme of the invention, the total flows of gases flowing into a reaction chamber in the whole process are the same, which is conducive to the pressure stability of the reaction chamber. Two groups of gases are injected into the reaction chamber respectively from above and below the reaction chamber at the same time, which ensures that etching reaction and deposition reaction of a substrate are not affected, reduces the volume of the reaction chamber in a disguised way, is more conducive to enabling gas to fast fill the reaction chamber, improves the rate of switching between an etching step and a deposition step, and improves the rate of etching of the substrate. Meanwhile, as the air pressure in the reaction chamber is higher than that at an air pump, pressure difference facing a gas flow controller is small, the flow rate of reaction gases can be accurately and stably controlled, and the stability of the manufacturing process is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor substrate processing, in particular to the technical field of rapidly realizing switching of reactive gas in deep processing plasma etching technology. Background technique [0002] In the field of semiconductor manufacturing technology, in the fields of MEMS (Micro-Electro-Mechanical Systems, micro-electro-mechanical systems) and 3D packaging technology, it is usually necessary to etch deep via holes in materials such as silicon. For example, in bulk silicon etching technology, deep through-silicon-vias (Through-Silicon-Via, TSV) have a depth of hundreds of microns and an aspect ratio greater than 10, and deep reactive ion etching is usually used to etch bulk silicon. form. [0003] In the prior art, the deep reactive ion etching of TSV is usually carried out using the Bosch process proposed in US Pat. No. 5,501,893. The specific deep reactive ion etching method includes the following ste...

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Problems solved by technology

[0005] When switching between the etching step and the deposition step, the gas in the reaction chamber 100 must be discharged, and the reaction gas required for another step is injected at the same time. Due to the large volume of the reaction chamber 100, the time required for this switching is relatively long. , reduces the deep reaction etching rate, and at the same time, because the etching gas flow controller 160 and the deposition gas flow controller 170 are in the normally open state, when a certain step is performed, the gas required for another step is discharged, causing the reaction gas waste of

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