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High-sensitivity three-shaft MEMS accelerometer and manufacturing process thereof

A high-sensitivity, accelerometer technology, applied in the field of sensors, can solve the problems of high installation accuracy, increased cost, and decreased detection accuracy, and achieves the effect of reducing overall size, accurate detection, and increasing modal isolation ratio.

Active Publication Date: 2014-11-26
浙江芯动科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But only when there is acceleration in the horizontal direction, such as shaking from side to side, the detection accuracy of this accelerometer decreases
[0005] Moreover, the above two technical solutions mainly measure the acceleration in a single plane direction. If you want to measure the acceleration in three directions, you need to install three accelerometers, which not only increases the cost, but also requires higher installation accuracy.

Method used

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  • High-sensitivity three-shaft MEMS accelerometer and manufacturing process thereof
  • High-sensitivity three-shaft MEMS accelerometer and manufacturing process thereof
  • High-sensitivity three-shaft MEMS accelerometer and manufacturing process thereof

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Embodiment Construction

[0054] Below in conjunction with accompanying drawing, the present invention is described in further detail:

[0055] refer to figure 1 , according to a high-sensitivity three-axis MEMS accelerometer provided by the present invention, comprising: a measuring body 1, an upper cover silicon wafer 2 and a lower cover silicon wafer 3 connected to the measuring body 1; the measuring body 1 , The upper cover plate silicon wafer 2 and the lower cover plate silicon wafer 3 are respectively provided with electrodes; the measuring body 1 adopts a silicon-on-insulator structure including an upper silicon layer 4 and a lower silicon layer 5, referred to as SOI structure. A buried oxide layer 6 is respectively disposed between each silicon layer, and an epitaxial layer 7 is formed on the surface of the upper silicon layer 4 .

[0056] see figure 2 , the measuring body 1 includes an outer frame 11 , an inner frame 12 located in the outer frame 11 and a mass 13 ; the outer frame 11 and t...

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Abstract

A tri-axial MEMS accelerometer includes a top cap silicon wafer and a bottom cap silicon wafer coupled with a measurement mass. The measurement mass has a two level structure, each level having an inner frame coupled to an outer frame by a plurality of first elastic beams, a mass coupled to the inner frame by a plurality of second elastic beams, and a comb coupling structure between the mass and the inner frame. The comb coupling structures are arranged in an orthogonal orientation. The top level and bottom level measurement masses measure acceleration in perpendicular directions. The top level and bottom level measurement masses and the inner frame form an integral unit which moves along a third direction. Acceleration in the third direction is measured from the change in capacitance between the integral unit and the top cap silicon wafer and bottom cap silicon wafer.

Description

technical field [0001] The invention relates to the field of sensors, in particular to an accelerometer Background technique [0002] Today, accelerometers are suitable for many applications, such as measuring the strength of earthquakes and collecting data, detecting the impact strength of a car crash, and detecting the angle and direction of tilt in mobile phones and game consoles. With the continuous advancement of microelectromechanical systems (MEMS) technology, many small nanometer-scale accelerometers have been widely used commercially. [0003] Commonly used MEMS accelerometers are divided into two types: piezoresistive type and capacitive type. Piezoresistive accelerometers are for example the Chinese invention patent application with the application number of 200480003916.7 and the publication date of March 15, 2006. Piezoresistive accelerometers are generally composed of a cantilever beam and a mass block, and the force-sensitive resistor is arranged on the canti...

Claims

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Application Information

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IPC IPC(8): G01P15/18B81B7/02B81C1/00
CPCB81C1/00142G01P15/125G01P15/0802G01P15/18H01L21/02123H01L21/02164H01L21/3065H01L21/31053
Inventor 孙晨于连忠
Owner 浙江芯动科技有限公司
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