Isolation structure of a high-voltage driving circuit and its preparation method

A high-voltage driving circuit and isolation structure technology, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve the problems of isolation structure breakdown voltage drop, breakdown, etc., and achieve simple preparation, ensure withstand voltage, and suppress punch-through Effect
CN104167434BActive Publication Date: 2017-01-04WUXI CHIPOWN MICROELECTRONICS
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Patents(China)
Current Assignee / Owner
WUXI CHIPOWN MICROELECTRONICS
Publication Date
2017-01-04

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Abstract

The invention discloses an isolation structure of a high-voltage driving circuit and a preparation method thereof. The improvement over the traditional isolation structure lies in that one N-type well region is respectively filled on both sides of the second P-type well region, thereby improving the isolation performance. While ensuring the withstand voltage of the isolation structure, the invention suppresses the punch-through leakage between the high voltage region and the drain terminal of the lateral diffusion field effect transistor in the isolation structure.
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Description

technical field

[0001] The invention belongs to the field of high-voltage power integrated circuits, and in particular relates to an isolation structure of a high-voltage drive circuit and a preparation method thereof. Background technique

[0002] In the field of power integrated circuits, high-voltage integrated circuits occupy an important position in the field of power integrated circuits because of their high reliability, high integration, high efficiency and low power consumption. High-voltage integrated circuits integrate high-voltage electronic devices, traditional control logic circuits and protection circuits on a single chip. It is widely used in motor controllers, electronic ballasts and automotive electronics. The level shift circuit in the high-voltage integrated circuit is a key part of the whole circuit. The leakage design of the high-voltage lateral diffusion field effect transistor (LDMOS) that constitutes the level shift circuit directly affects the norma...

Claims

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