Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for preparing embedded metal/ transparent conductive film

A transparent conductive film and metal technology, which is applied in metal material coating process, ion implantation plating, vacuum evaporation plating, etc., can solve the problem of light transmittance decrease, and achieve easy access, good controllability, and conductive performance Good results

Active Publication Date: 2014-12-03
东台城东科技创业园管理有限公司
View PDF4 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a kind of preparation method of embedded metal / transparent conductive film for above-mentioned TCO thin film along with the increase of metal layer thickness, the deficiency that light transmittance drops greatly, while improving the conductivity of TCO thin film, as far as possible Reduce the loss of its light transmittance, and finally obtain a metal / transparent conductive film with the best photoelectric performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing embedded metal/ transparent conductive film
  • Method for preparing embedded metal/ transparent conductive film
  • Method for preparing embedded metal/ transparent conductive film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] figure 1 Process flow diagram for embedded metal / transparent conductive film, such as figure 1 Shown:

[0027] (1) Preparation of FTO film with concave hole structure: use FTO glass as the substrate, and cut it into small pieces with an area of ​​2.0cm×2.0cm, and then ultrasonically clean it in deionized water, acetone, and ethanol for 10 minutes Blow dry with high-purity nitrogen, and dry in an oven below 80°C for 1 hour to obtain a clean FTO film; then place the FTO film on the sample stage of an ultrashort pulse laser, adjust the position of the sample stage, and make the FTO film The surface is located at the focal point of the laser beam emitted by the laser; take 400 mesh stainless steel mesh as a template, cover it on the surface of the FTO film, and carry out laser surface treatment to obtain a FTO film with uniform and regular concave hole structure. The pulse width of the beam is 1ns, the wavelength is 532nm, the repetition frequency is 1kHz, and the laser e...

Embodiment 2

[0035] figure 1 Process flow diagram for embedded metal / transparent conductive film, such as figure 1 Shown:

[0036](1) Preparation of AZO film with concave hole structure: AZO glass is used as the substrate, and it is cut into small pieces with an area of ​​2.0cm×2.0cm, and then ultrasonically cleaned in deionized water, acetone, and ethanol for 10 minutes. Blow dry with high-purity nitrogen and dry in an oven below 80°C for 1 hour to obtain a clean AZO film; then place the AZO film on the sample stage of an ultrashort pulse laser, adjust the position of the sample stage, and make the AZO film The surface is located at the focal point of the laser beam emitted by the laser; take 400 mesh stainless steel mesh as a template, cover it on the surface of the AZO film, and carry out laser surface treatment to obtain an AZO film with a uniform and regular concave hole structure. The pulse width of the beam is 16ns, the wavelength is 800nm, the repetition frequency is 1kHz, and th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for preparing an embedded metal / transparent conductive film. The method comprises the steps of adding a metal net to TCO glass serving as a substrate, and treating with an advanced laser micro-treatment technology to obtain a TCO film with a depression hole structure; then sputtering a metal M layer by adopting a high vacuum direct-current magnetron sputtering instrument to obtain a metal M / TCO film; and performing annealing treatment to obtain the embedded metal M / TCO film. The conductivity of the embedded metal M / TCO film is improved, and the light transmittance loss is low. The preparation method is simple and good in controllability, and the metal net adopted in the process is wide in source and readily available and can be reused, so that the preparation method is good in practicability.

Description

technical field [0001] The invention relates to the fields of laser micro-nano processing technology and semiconductor materials, in particular to a preparation method of an embedded metal / transparent conductive film. Background technique [0002] Transparent conductive oxide (TCO) films are widely used in solar cells, display devices, gas sensors and pressure sensors because of their good electrical conductivity, high transmittance in the visible light region, and high reflectivity in the infrared region. Electrical devices and other optoelectronic devices. With the continuous improvement of people's requirements for the performance of optoelectronic devices, higher requirements are put forward for the optoelectronic properties of TCO thin films. [0003] At present, the research on TCO thin films mainly focuses on double-layer or multi-layer composite thin films, that is, the photoelectric performance of TCO thin films can be improved by introducing metal or other conduct...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/02C23C14/18C23C14/58
Inventor 黄立静任乃飞李保家周明吴勃
Owner 东台城东科技创业园管理有限公司