Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as reducing reliability and damage, and achieve the effect of improving withstand voltage and reliability

Active Publication Date: 2017-06-20
FUJITSU LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This leads to damage on the end 950a of the bottom of the gate trench 950, reducing the reliability

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0047] (Semiconductor device)

[0048] will be based on Figure 3 to Figure 4 A HEMT as the semiconductor device in the first embodiment is described. Notice image 3 is a top view of the semiconductor device according to the present embodiment, and Figure 4 for along image 3 A cross-sectional view of the semiconductor device taken by the dotted line 3A-3B. Although the description in this embodiment assumes that a plurality of HEMTs are formed on the same substrate, only one HEMT may also be formed.

[0049] The semiconductor device in this embodiment has layers formed on a substrate 11 including an initial growth layer 12, a buffer layer 13, an electron transit layer 21, an electron supply layer 22 and Cover layer 23. In addition, gate trench 50 is formed by removing part of capping layer 23 and electron supply layer 22 by dry etching in a region where gate electrode 41 is to be formed. The gate electrode 41 is formed on the inner sidewall and bottom of the gate tre...

no. 2 approach

[0083] (Semiconductor device)

[0084] Next, based on Figure 14 to Figure 15 A transistor having a UMOS structure as a semiconductor device in the second embodiment is described. Notice Figure 14 is a top view of the semiconductor device according to the present embodiment, and Figure 15 for along Figure 14 A cross-sectional view of the semiconductor device taken by the dotted line 14A-14B. Although the description in this embodiment assumes that a plurality of transistors having a UMOS structure are formed over the same substrate in this embodiment, only one transistor having a UMOS structure may also be formed.

[0085] The semiconductor device in the present embodiment has layers formed on the surface of a substrate 111 including a first semiconductor layer 121 , a second semiconductor layer 122 , and a third semiconductor layer 123 stacked in this order. Note that substrate 111 is an n-type substrate, for example, an n-GaN substrate. The first semiconductor layer...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a semiconductor device comprising: a first semiconductor layer formed of a nitride semiconductor on a substrate; a second semiconductor layer formed of a nitride semiconductor on the first semiconductor layer; in the second semiconductor layer or A gate trench formed in the second semiconductor layer and the first semiconductor layer; a gate electrode formed at the gate trench; and a source electrode and a drain electrode formed on the second semiconductor layer. The gate trench has an end portion of a bottom formed shallower than a middle portion of a bottom of the gate trench. Part of the sidewall of the gate trench is formed by a surface including the a-plane. The middle part of the bottom is the c plane. The end of the bottom forms a slope from plane c to plane a.

Description

technical field [0001] The disclosure herein relates generally to semiconductor devices and methods of manufacturing the same. Background technique [0002] Nitride semiconductors such as GaN, AlN, and InN, or mixed crystals of these nitride semiconductor materials have a wide bandgap, and are used as high-output electronic devices, short-wavelength light-emitting devices, and the like. Technologies related to field effect transistors (FETs) (specifically, high electron mobility transistors (HEMTs)) have been developed (see, for example, Patent Document 1) for use as high output devices. HEMTs using such nitride semiconductors are used for high-output high-efficiency amplifiers, high-power switching devices, and the like. [0003] Incidentally, normally-off is required as one of the characteristics of high-output high-efficiency amplifiers, switching devices, and the like. In addition, the normal break is important from the point of view of safe operation. However, in HEM...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/778H01L29/423H01L29/06H01L21/335
CPCH01L29/045H01L29/4236H01L29/42376H01L29/66462H01L29/7786H01L29/41758H01L29/2003H01L29/4238H01L29/66734H01L29/7813H01L29/66446H01L29/7787H01L29/205
Inventor 美浓浦优一冈本直哉
Owner FUJITSU LTD