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Low power consumption reference voltage source circuit for 4g communication chip

A reference voltage source and communication chip technology, applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc., can solve the problems of unfavorable highly integrated low-cost solutions, inability to achieve low power consumption, and occupying a large area. Achieve the effects of low power consumption, high integration, and small layout area

Inactive Publication Date: 2016-05-11
国网山东省电力公司莱西市供电公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] 1. The bandgap reference voltage source contains an operational amplifier, and the power consumption of this structure is generally tens of uA, which cannot achieve low power consumption;
[0009] 2. The op amps in the bandgap reference along with the transistors and high value resistors take up a lot of area, preventing a highly integrated low cost solution

Method used

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  • Low power consumption reference voltage source circuit for 4g communication chip
  • Low power consumption reference voltage source circuit for 4g communication chip

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Embodiment Construction

[0028] See figure 2 As shown, this is the electrical schematic diagram of the low power consumption high precision reference voltage source circuit of the present invention. The low-power reference voltage source circuit for 4G communication chips of the present invention includes: enhanced NMOS transistors N1, enhanced PMOS transistors P1-P8, depleted NMOS transistors D1-D3 and capacitor C1. circuit diagram as figure 2 , The source terminals of P1, P2, P5, P7, and P8 tubes are connected to the power supply VDD, the gate terminal and drain terminal of P1 are shorted and connected to the gate terminals of P2, P7 and the source terminal of P3, and the drain terminal of P2 is connected to the source terminal of P4 , the gate terminal and drain terminal of P3 are shorted and connected to the gate terminals of P4 and P6 and the drain terminal of N1, the source terminal of N1 is grounded, the drain terminal of P4 is connected to the drain terminal of D1 and the gate terminal of P...

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PUM

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Abstract

The invention belongs to the technical field of integrated circuits and relates to a low-power-consumption reference voltage source circuit for a 4G (4th Generation) communications chip. The circuit comprises a self-biased voltage reference source circuit, which consists of enhancement-mode tubes and depletion-mode tubes, and a start circuit and is characterized in that the voltage of an output terminal VREF is independent of power supply voltage VDD and does not change along with the change of the VDD; by using the characteristic that the threshold of the enhancement-mode tubes and the threshold of the depletion-mode tubes have opposite temperatures, the voltage of the VREF does not change along with temperature; by using the characteristic that the on-resistance of depletion-mode NMOS (N-Channel Metal Oxide Semiconductor) tubes short-circuited with gate-source is extremely high, the working current of the circuit is very low and has low static power consumption. Thus, due to the adoption of a depletion-mode MOS (Metal Oxide Semiconductor) tube and enhancement-mode MOS tube combined manner, the high-precision low-power-consumption reference voltage source circuit which does not change along with the power supply voltage and temperature is generated.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and relates to a low-power reference voltage source circuit for 4G communication chips, which is suitable for being embedded in various chips that require high-precision reference voltage sources, and is especially suitable for applications that require extremely high power consumption. All kinds of mobile devices, such as mobile phones, laptops, etc. Background technique [0002] As we all know, in all the schemes involving analog circuit design, there will be a reference voltage source circuit that provides a stable voltage source that does not change with the power supply voltage and temperature for other modules in the chip. At present, the general sampling reference voltage source is a bandgap reference voltage source (Bandgap) structure, but the power consumption is often relatively large, about dozens of uA, which is difficult to meet the requirements of low power consumption...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G05F1/56
Inventor 李伟辛海波邵虎江丽娟田载纯张健王均玉
Owner 国网山东省电力公司莱西市供电公司
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