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High-temperature piezoelectric ceramic material and preparation method thereof

A technology of piezoelectric ceramics and ceramic materials, which is applied in the field of piezoelectric ceramics with high Curie temperature and its preparation, can solve the problems that the comprehensive electrical properties cannot meet the requirements of device use at the same time, and the price is high, and achieves low dielectric loss and preparation cost. low effect

Inactive Publication Date: 2014-12-24
INST OF ACOUSTICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Aiming at the problems that existing piezoelectric ceramic materials are difficult to obtain high Curie temperature and high-voltage electrical properties at the same time, the comprehensive electrical properties cannot meet the requirements of device use at the same time, or the price is expensive, etc., the present invention provides a high Curie temperature, relatively high piezoelectric ceramic material. New doped low-cost high-temperature piezoelectric ceramic material with greatly improved coefficient and mechanical quality factor, adjustable within a certain range and low dielectric loss

Method used

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  • High-temperature piezoelectric ceramic material and preparation method thereof
  • High-temperature piezoelectric ceramic material and preparation method thereof
  • High-temperature piezoelectric ceramic material and preparation method thereof

Examples

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Effect test

Embodiment 1

[0025] Bi 2 o 3 , Yb 2 o 3 , Pb 3 o 4 、TiO 2 , ZrO 2 and MnCO 3 Press (BiYb) 0.07 Pb 0.93 Ti 0.49 Zr 0.44 o 3 ++Weigh the molar ratio of 1mol% Mn, add anhydrous ethanol medium to mix and ball mill, dry and sieve, pre-calcine at 750°C for 2h. The pre-fired block is then ball milled, dried and granulated with 5% PVA, aged for 6 hours, sieved and pressed into a green body with a diameter of 15mm and a thickness of about 1.5mm, and sintered at 1120°C for 2.5h. The obtained sample was ground, polished, silvered, and polarized in 160°C silicone oil with an electric field of 4kV / mm for 20 minutes, and the required ceramic sample was prepared after cooling down. The comprehensive electrical properties obtained from the test were: d 33 =213pC / N,T c =395°C, Q m =356, tanδ=0.002.

Embodiment 2

[0027] Bi 2 o 3 , Yb 2 o 3 , Pb 3 o 4 、TiO 2 , ZrO 2 and Nb 2 o 5 Press (BiYb) 0.06 Pb 0.94 Ti 0.5 Zr 0.44 o 3 ++ 0.2mol% Nb molar ratio weighing, adding water medium to mix and ball mill, drying and sieving, pre-calcined at 750°C for 2h. Ball mill the pre-fired block, dry it, add 6% PVA to granulate, age for 6 hours, press it into a green body with a diameter of 15mm and a thickness of about 1.5mm after sieving, and sinter at 1150°C for 3 hours to obtain After the sample is polished, polished, and silvered, it is polarized in 160°C silicone oil with an electric field of 4kV / mm for 10 minutes, cooled to 110°C and then polarized for 10 minutes to make a ceramic sample. The comprehensive electrical properties obtained from the test are: d 33=213pC / N, T c =390°C, Q m =156, tanδ=0.011.

Embodiment 3

[0029] Bi 2 o 3 , Yb 2 o 3 , Pb 3 o 4 、TiO 2 , ZrO 2 and Cr 2 o 3 Press (BiYb) 0.05 Pb 0.95 Ti 0.5 Zr 0.45 o 3 ++0.2mol%Cr molar ratio weighing, adding water medium to mix ball milling, drying and sieving, pre-calcined at 800°C for 2h. Ball mill the pre-fired block, dry it, add 5% PVA to granulate, age for 6 hours, press it into a green body with a diameter of 15mm and a thickness of about 1.5mm after sieving, and sinter at 1150°C for 3 hours to obtain After the sample is polished, polished, and silvered, it is polarized in 160°C silicone oil with an electric field of 4kV / mm for 10min to prepare a ceramic sample. The comprehensive electrical properties obtained from the test are: d 33 =220pC / N,T c =401°C, Q m =180, tanδ=0.001.

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Abstract

The invention discloses a high-Curie-temperature piezoelectric ceramic. The general formula of the piezoelectric ceramic is (BiYb)(1-x)PbxTiyZr(x-y)O(3+z)mol%A, wherein x is equal to 0.91-0.98, y is equal to 0.45-0.68, z is equal to 0.05-5, and A is a modified element. The invention also provides a method for preparing the piezoelectric ceramic. The piezoelectric ceramic prepared by using the method has relatively high Curie temperature, relatively high piezoelectric constant, relatively low dielectric loss, relatively high electro-mechanical coupling coefficient, mechanical quality factors with relatively wide variable range and the like, and can solve the problems that an existing piezoelectric material can difficultly have relatively high Curie temperature and relatively high piezoelectric performance at the same time, and integrated electrical parameters cannot meet the use requirements of specific piezoelectric devices. The high-Curie-temperature piezoelectric ceramic disclosed by the invention has the characteristics that the high-Curie-temperature piezoelectric ceramic is simple and stable in process, does not need special equipment, is relatively low in cost, convenient for large-scale industrial production and the like, and can be applied to various corresponding high-temperature piezoelectric devices.

Description

technical field [0001] The invention relates to the field of electronic ceramics and piezoelectric devices, in particular to a piezoelectric ceramic with a high Curie temperature and a preparation method thereof. Background technique [0002] The development of modern industry has put forward higher requirements for the high-temperature environment operation of various acoustic transducers and vibration sensors, which requires the piezoelectric materials used in these devices to have a higher Curie temperature (T c ). For example, acoustic logging transducers used in oil wells, piezoelectric actuators and sensors used in spacecraft, fuel injection nozzle drivers, and various sensors used in other extreme environments all require T c Piezoelectric ceramics above 380°C or even higher. The T of the most commonly used piezoelectric ceramic lead zirconate titanate (PZT) c Generally much lower than 360°C. Because of the degradation of piezoelectric properties caused by the gra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/491C04B35/622
Inventor 郭栋王云丽蔡锴
Owner INST OF ACOUSTICS CHINESE ACAD OF SCI
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