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Al-spike preventing film forming process

A process method and film-forming technology, which are applied in the manufacturing of electrical components, electric solid-state devices, semiconductor/solid-state devices, etc., to achieve the effects of reducing film-forming time, preventing device failure, and reducing bottom diffusion.

Active Publication Date: 2014-12-31
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The method of the invention can solve the aluminum wedge phenomenon caused by the existing aluminum-silicon contact, and prevent device failure

Method used

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  • Al-spike preventing film forming process
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  • Al-spike preventing film forming process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] The film-forming process for preventing aluminum wedges of the invention can be used in the manufacture of aluminum-silicon contact processes. The procedure of this method is as follows image 3 As shown, the steps include:

[0033] (1) According to the conventional process, on the silicon wafer (such as the oxide layer 2 of the substrate silicon 1), etch the silicon contact through hole 3 (such as Figure 4 shown);

[0034] Wherein, the bottom material of the silicon contact via 3 is semiconductor silicon (silicon substrate 1 ).

[0035] (2) On the surface of the silicon wafer, the side walls and the bottom of the silicon contact through hole 3, the first aluminum film is formed by physical sputtering (the sputtering temperature is 10-500° C., and the sputtering pressure is 1-10 torr). Silicon-copper film 4 (i.e. the pre-film formation of aluminum-silicon-copper), and after the film formation ends, the silicon wafer is cooled to room temperature (such as Figure 5 ...

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Abstract

The invention discloses an Al-spike preventing film forming process. The Al-spike preventing film forming process comprises the following steps: 1) conducting silicon contact via etching on a silicon wafer; 2) forming a first aluminum silicon copper film on the surface of the silicon wafer and the side wall and the bottom part of the silicon contact via, and cooling the silicon wafer to room temperature; 3) conducting etching to the first aluminum silicon copper film; 4) forming a second aluminum silicon copper film on the surface of the first aluminum silicon copper film; 5) etching metal aluminum silicon copper. The film forming process disclosed by the invention can effectively reduce the silicon contact bottom diffusion effect before film formation, can prevent Al-spikes from being formed and thus can prevent a device from failing.

Description

technical field [0001] The invention relates to a film forming method in the semiconductor field, in particular to a film forming process method for preventing aluminum wedges. Background technique [0002] With the development of semiconductor devices to deep submicron dimensions, the density and complexity of devices are increasing, and the requirements for process technology are becoming more and more stringent. Via holes play a very important role in the construction of devices as the interconnection of multi-layer metal layers and the connection between devices and external circuits. [0003] Especially during the silicon-aluminum contact process, the solubility of silicon in aluminum is greater than that of aluminum in silicon, which leads to the dissolution of silicon in aluminum, thereby forming an aluminum spike (Al-Spike) (Figure 1-2 shown). The general process is that adding 1% (wt%) silicon to Al can largely solve the aluminum wedge phenomenon. [0004] Among ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768
CPCH01L21/7685H01L21/76898H01L2221/1073
Inventor 刘善善
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP