Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A Weak Acid Copper Polishing Fluid for Low Downforce

A polishing liquid, weak acid technology, applied in the direction of polishing compositions containing abrasives, etc., to achieve the effect of simple process, low cost and low price

Inactive Publication Date: 2016-06-29
SHENZHEN LEAGUER MATERIAL +2
View PDF10 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above-mentioned patent mainly considers how to increase the removal rate of copper materials under low down pressure conditions, and how to achieve a copper polishing solution with high removal rate, less particle residue, and no ion pollution under low down pressure conditions, which is less corrosive to equipment, needs further development Research

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A Weak Acid Copper Polishing Fluid for Low Downforce
  • A Weak Acid Copper Polishing Fluid for Low Downforce
  • A Weak Acid Copper Polishing Fluid for Low Downforce

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment

[0030] The configured polishing liquid is used for polishing experiments, and the parameters of the polishing experiments are as follows:

[0031] Polishing machine: 12-inch chemical mechanical polishing machine (Strasbaugh6EG type), equipped with a polishing head, which can polish a 12-inch copper-plated sheet (customized from Huali Semiconductor, the thickness of the copper layer is 2 microns);

[0032] Polishing turntable speed: 100 rpm;

[0033] Polishing head speed: 95 rpm;

[0034] Specifications of polished copper-plated sheet: diameter 300mm;

[0035] Polishing time: 1min;

[0036] Polishing pad: IC1000-XY / SUBAIV20 composite polishing pad;

[0037] Polishing fluid flow rate: 80ml / min;

[0038] Polishing pressure: 0.5-1psi;

[0039] Polishing temperature: 250C

[0040] Polishing rate: The polishing removal rate is calculated by the change of the wafer weight before and after polishing. It can be measured by an electronic balance. The polishing rate is the ratio of t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
surface roughnessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a weakly acidic copper polishing solution applicable to low downforce and belongs to the technical field of microelectronics auxiliary materials and ultra-precision machining processes. The polishing solution comprises abrasive particles, an oxidant, deionized water, an inhibitor, a complexing agent and a silica sol stabilizer; and the pH value of the polishing solution is 5-7. By adopting the weakly acidic copper polishing solution, high removal speed and high surface accuracy of copper polishing are achieved under the condition of low downforce (below 1 psi) and the surface of polished copper has less residues of abrasive particles and ionic contamination.

Description

technical field [0001] The invention belongs to the technical field of microelectronic auxiliary materials and ultra-precision processing technology, and particularly relates to a copper weak acid polishing liquid with high removal rate, less particle residue and no ion pollution. Background technique [0002] Chemical mechanical polishing (CMP) is currently recognized as the most effective method to achieve local and global planarization of materials, and is widely used in surface planarization of IC manufacturing processes. Copper has been used as the middle layer lead of IC integrated circuits, and copper CMP is the main processing technology of micro devices, and all countries are stepping up research on key problems. The key factor affecting the global planarization of copper CMP is the polishing liquid, which determines whether the entire polishing process and polishing results are ideal. Internationally, copper CMP polishing solutions are mainly divided into two cate...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 顾忠华潘国顺龚桦邹春莉罗桂海王鑫陈高攀
Owner SHENZHEN LEAGUER MATERIAL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com