Flip LED chip and manufacturing method thereof

An LED chip and flip-chip technology, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of multiple manufacturing processes, increased area thickness, and more precious metals for flip-chip LED chips, and achieves low cost, low voltage, and preparation. simple method effect

Inactive Publication Date: 2015-01-07
ENRAYTEK OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method requires the introduction of reflective layer Ag, barrier layer (Barrier layer), and N link layer (Connect layer). In addition, the expansion of the area and thickness of the electrode (AuSn) will lead to more manufacturing processes for flip-chip LED chips. , more precious metals, the cost is much higher than that of the chip

Method used

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  • Flip LED chip and manufacturing method thereof
  • Flip LED chip and manufacturing method thereof
  • Flip LED chip and manufacturing method thereof

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Embodiment Construction

[0024] The flip-chip LED chip of the present invention and its preparation method will be described in more detail below in conjunction with schematic diagrams, wherein a preferred embodiment of the present invention is shown, and it should be understood that those skilled in the art can modify the present invention described here and still implement the present invention. Beneficial effects of the invention. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.

[0025] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the developer's specif...

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Abstract

The invention provides a flip LED chip and a manufacturing method of the flip LED chip. The manufacturing method of the flip LED chip has the advantages of being free of routing, good in heat radiation performance, low in voltage and high in luminance, facilitating packaging and the like. Compared with other flip chips, a reflecting layer, a blocking layer and an N-link layer do not need to be manufactured, an isolating layer with patterns has the function of the reflecting layer, no PN welding disc large in area and thickness needs to be manufactured, and the manufacturing method is easy and low in cost.

Description

technical field [0001] The invention relates to the field of LED manufacturing, in particular to a flip-chip LED chip and a preparation method thereof. Background technique [0002] In the traditional front-mounted structure LED chip, P-type GaN is difficult to dope, which leads to low hole carrier concentration and difficulty in growing thick, which makes the current difficult to spread. Currently, the method of preparing ultra-thin metal film or ITO film on the surface of P-type GaN is generally used. The method allows the current to spread evenly. However, the metal thin film electrode layer will absorb part of the light, reducing the light extraction efficiency. If the thickness of the metal thin film electrode layer is reduced, the current diffusion layer will be restricted to achieve uniform and reliable current diffusion on the surface of the P-type GaN layer. Although the light transmittance of ITO is as high as 90%, the electrical conductivity is not as good as th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/48H01L33/60H01L33/02H01L33/00
CPCH01L33/46H01L33/36H01L33/38H01L2933/0016H01L2933/0025
Inventor 李智勇徐惠文张宇李起鸣
Owner ENRAYTEK OPTOELECTRONICS
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