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GeSn infrared detector with strain source

An infrared detector and array technology, which is applied in the field of infrared detection, can solve the problems of material quality and thermal stability variation, difficulty in wide-range bandgap adjustment, etc., and achieve the effect of adjustable energy band

Inactive Publication Date: 2015-06-03
CHONGQING UNIV
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  • Application Information

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Problems solved by technology

However, with the increase of Sn composition, the material quality and thermal stability will be deteriorated, so it is difficult to achieve a wide range of band gap adjustment solely by increasing the Sn composition.

Method used

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  • GeSn infrared detector with strain source
  • GeSn infrared detector with strain source
  • GeSn infrared detector with strain source

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Embodiment Construction

[0029] In order to understand the technical essence of the present invention more clearly, the structure and process realization of the present invention are described in detail below in conjunction with the accompanying drawings and embodiments:

[0030] Among them, the light absorbing array is made of single crystal GeSn material, the strain source array is made of single crystal SiGe material distributed around the light absorbing unit, the GeSn metal contact array and the SiGe metal contact array are respectively located on the light absorbing array and the strain source array, the first electrode Surrounding the top of the metal contact array, the second electrode is on the substrate.

[0031] see figure 1 and figure 2 GeSn infrared detector with strain source shown, which has n + Si substrate 101, relaxation layer 102, light absorption array 103, strain source array 104, GeSn metal contact array 105, SiGe metal contact array 106, first electrode 107, second electrode...

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Abstract

The invention provides a GeSn infrared detector with a strain source. The structure of the GeSn infrared detector is characterized in that an n-type GeSn relaxation layer 102 is arranged on an n+ substrate 101; a SiGe strain source array 104 on the relaxation layer grows at the peripheral regions of light-absorption units of a GeSn light-absorption array 103; the top portion of the GeSn light-absorption array is provided with a p+ GeSn metal contact array 105; the top portion of the strain source is provided with a p+ SiGe metal contact array 106; a first electrode 107 surrounds the metal contact arrays of the illumination region of the detector; and a second electrode 108 is arranged on the n+ substrate 101. The lattice constant of the materials of the strain source array 104 is smaller than that of the material of the light-absorption array 103, thereby forming strain of the light-absorption region; and the strain is a double-axis tensile strain in the xy plane, and is a single-axis compression strain in the z direction. The train facilitates GeSn channel gamma point to move downwards, so that the width of a direct gap Eg[gamma] decreases, and the photoresponse range of the detector is widened.

Description

technical field [0001] The invention relates to the technical field of infrared detection, in particular to a GeSn infrared detector. Background technique [0002] The forerunner of the development of infrared technology is the development of infrared detectors, and the development level of a country's infrared detectors represents the development level of its infrared technology. Infrared detectors have important applications in many aspects such as military, national defense, fire protection, medical treatment, climate monitoring, resource exploration, and astronomical observation. World War II made infrared detection technology developed rapidly. Infrared detectors of InSb, HgCdTe, doped Si, PtSi and other materials have appeared successively. But neither InSb nor PtSi has wavelength tunability. Although doped Si has a wide spectral bandwidth, it does not have wavelength tunability and must work at a very low temperature. Mercury Cadmium Telluride (Hg x Cd 1-x Te) l...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/028H01L31/09H01L31/18
CPCH01L31/0312H01L31/09H01L31/18Y02P70/50
Inventor 刘艳韩根全张庆芳王轶博
Owner CHONGQING UNIV
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