Check patentability & draft patents in minutes with Patsnap Eureka AI!

Iron oxide film with exchange bias effect and preparation method of iron oxide film

A technology of iron oxide film and ferrous oxide, applied in the field of iron oxide film with exchange bias effect and preparation thereof

Active Publication Date: 2015-01-28
中国科学院上海硅酸盐研究所苏州研究院
View PDF5 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Although about FeO / Fe 3 o 4 The exchange bias effect of nano-core-shell composite particles has been studied, but there is no report on the exchange bias effect of the two-dimensional iron oxide thin film system

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Iron oxide film with exchange bias effect and preparation method of iron oxide film
  • Iron oxide film with exchange bias effect and preparation method of iron oxide film
  • Iron oxide film with exchange bias effect and preparation method of iron oxide film

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0026] The invention relates to an iron oxide thin film with a strong exchange bias effect and a preparation method thereof, wherein the structure of the iron oxide thin film (without removing the strontium titanate layer or the strontium titanate substrate) is: triiron tetroxide ( Fe 3 o 4 ) / ferrous oxide (FeO) / strontium titanate (SrTiO 3 ) transition layer / single crystal substrate, or Fe 3 o 4 / FeO / SrTiO 3 single crystal substrate. SrTiO 3 The interface is the key to the exchange bias effect of the system: vacuum (≤3×10 -4 Pa) After high temperature (300-600°C) annealing, SrTiO 3 Ti 3+ -Vo, thus forming an epitaxial layer of ferrous oxide (FeO) at the interface at the initial stage of film growth, and the epitaxial Fe 3 o 4 Subsequent growth of the thin layer. Antiferromagnetic FeO and Ferrimagnetic Fe 3 o 4The exchange coupling effect between them makes the system exhibit a strong exchange bias effect. The present invention controls the film growth interface, ...

Embodiment 1

[0042] In a pulsed laser deposition system, SrTiO with (001) orientation 3 The single crystal is used as the substrate, and the iron oxide film with a thickness of about 26nm is prepared;

[0043] 1) The (001)SrTiO polished on one side 3 The single crystal substrate is placed in the reaction chamber of the pulsed laser deposition system, and the background of the pulsed laser deposition system is evacuated to ≤5×10 -4 Pa, heat the substrate to 400°C, then vacuum the reaction chamber to ≤3×10 -4 Pa; dense Fe with a purity greater than 99.99% 2 o 3 Ceramic block as target material, laser energy 7J / cm 2 , deposition rate 1.5 ~ 2nm / min. After deposition, in high vacuum (≤3×10 -4 Pa) ambient temperature is lowered to room temperature at a rate of 6°C / min, so as to obtain figure 1 The iron oxide thin film of (b) structure;

[0044] 2) adopt superconducting quantum interferometer (SQUID) to measure the sample that embodiment 1 makes under H=1T and H=-1T magnetic field cooling...

Embodiment 2

[0047] In a pulsed laser deposition system, SrTiO 3 PMN-PT and MgAl as the transition layer 2 o 4 The single crystal is used as the substrate, and the iron oxide film with a thickness of about 26nm is prepared;

[0048] 1) PMN-PT and MgAl with (001) orientation in a pulsed laser deposition system 2 o 4 The single crystal is used as the substrate to prepare SrTiO with a thickness of about 10nm 3 Floor. Preparation process parameters: substrate temperature T = 700°C, deposition oxygen pressure 0.1Pa, laser energy 5J / cm 2 ;

[0049] 2) In the pulsed laser deposition system, the SrTiO prepared in step (1) 3 / PMN-PT, SrTiO 3 / MgAl 2 o 4 And PMN-PT, MgAl 2 o 4 A single crystal is used as a substrate, and an iron oxide film with a thickness of about 26 nm is prepared. Preparation process is with embodiment 1;

[0050] 3) Measure the magnetic properties of the sample with a superconducting quantum interferometer (SQUID), and measure the M-H curve of the sample at tempera...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to an iron oxide film with exchange bias effect and a preparation method of the iron oxide film. The iron oxide film comprises a ferromagnetic ferrous oxide thin layer as well as a ferromagnetic ferroferric oxide thick layer which is grown on the ferromagnetic ferrous oxide thin layer in an epitaxial manner.

Description

technical field [0001] The invention belongs to the field of functional thin films, in particular to an iron oxide thin film with exchange bias effect and a preparation method thereof. Background technique [0002] In the interface region where two phases form, one of the most important features is the breaking of symmetry. The degrees of freedom such as charges, spins, orbits, and lattices and the coupling between degrees of freedom will change accordingly, eventually leading to novel physical phenomena at the interface, such as quantum Hall effect, magnetoelectric coupling, interface superconductivity, and exchange bias Wait. Among them, the exchange bias effect has good application prospects in the technical fields of spintronic devices, spin valves, and magnetic tunnel junctions, and people have launched systematic and in-depth research on it. [0003] At present, researchers have found that the exchange bias phenomenon widely exists in ferromagnetic / antiferromagnetic,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B23/02C30B29/16C23C14/28C23C14/08
Inventor 朱秋香李效民郑仁奎高相东
Owner 中国科学院上海硅酸盐研究所苏州研究院
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com