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Heterojunction material as well as preparation method thereof and application thereof

A heterojunction and target material technology, applied in the direction of material selection, metal material coating process, size/direction of magnetic field, etc., can solve problems such as no exchange bias effect, achieve wide application potential, and the method is simple and easy line effect

Pending Publication Date: 2020-06-19
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the products obtained by the method do not have the exchange bias effect

Method used

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  • Heterojunction material as well as preparation method thereof and application thereof
  • Heterojunction material as well as preparation method thereof and application thereof
  • Heterojunction material as well as preparation method thereof and application thereof

Examples

Experimental program
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Embodiment 1

[0078] In this embodiment, the heterojunction material was prepared according to the following method:

[0079] (1) SrTiO polished on one side using ultrasonic 3 (001) The single crystal substrate was sonicated in isopropanol for 15 min and deionized water for 5 min, respectively, and the process was repeated twice.

[0080] (2) Using pulsed laser deposition method under the conditions of deposition temperature of 650℃ and oxygen pressure of 0.18mbar, with SrCO 3 And IrO 2 The powder is weighed according to the ratio of Sr and Ir elements at a ratio of 1:1, and the SrIrO is obtained by sintering after fully grinding and mixing. 3 For the target. The distance between target and substrate is 5cm, at 1.2J / cm 2 Under laser energy, deposit 6min, in SrTiO 3 (001) Depositing thickness on the substrate is 25nm SrIrO 3 Floor.

[0081] (3) Using pulsed laser deposition method at a deposition temperature of 700 ℃ and an oxygen pressure of 35 Pa, using La 2 O 3 , SrCO 3 And MnO 2 The powder is w...

Embodiment 2

[0090] In this embodiment, the heterojunction material was prepared according to the following method:

[0091] (1) SrTiO polished on one side using ultrasonic 3 (001) The single crystal substrate was sonicated in isopropanol for 15 min and deionized water for 5 min, respectively, and the process was repeated twice.

[0092] (2) Using pulsed laser deposition method under the conditions of deposition temperature of 650℃ and oxygen pressure of 0.18mbar, with SrCO 3 And IrO 2 The powder is weighed according to the ratio of Sr and Ir elements at a ratio of 1:1, and the SrIrO is obtained by sintering after fully grinding and mixing. 3 Is the target, the distance between the target and the substrate is 5cm, at 1.2J / cm 2 Under laser energy, deposit for 3.5min, in SrTiO 3 (001) Depositing thickness on the substrate is 15nm SrIrO 3 Floor.

[0093] (3) Using pulsed laser deposition method at a deposition temperature of 700 ℃ and an oxygen pressure of 35 Pa, using La 2 O 3 And MnO 2 The powder i...

Embodiment 3

[0099] The preparation method of the heterojunction material of this embodiment refers to embodiment 2, except that the deposition time of step (3) is modified to 5.5 min, so that LaMnO 3 The thickness of the layer is the same as the preparation method of Example 2 except that the thickness of the layer is 9 nm.

[0100] The structure of the heterojunction material provided in this embodiment is except for LaMnO 3 Except that the thickness of the layer is 9 nm, other structural parameters are the same as the product of Example 2.

[0101] The SrIrO provided in this embodiment was tested with a superconducting quantum interference instrument 3 / LaMnO 3 The magnetic properties of the heterojunction material are characterized, and the exchange bias field H of the heterojunction material provided in this embodiment is E = 179 Oe.

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Abstract

The invention provides a heterojunction material as well as a preparation method thereof and application thereof. The heterojunction material comprises a SrIrO3 layer and a manganese oxide layer located on the SrIrO3 layer. The preparation method comprises the following steps: (1) depositing a SrIrO3 layer; and (2) depositing a manganese oxide layer on the SrIrO3 layer to obtain a heterojunction material. According to the heterojunction material provided by the invention, the asymmetric charge transfer of a heterojunction interface is driven under the combined action of polarity discontinuityof the heterojunction interface and strong spin-orbit coupling energy in SrIrO3. By adjusting the polarity discontinuity of the heterojunction interface and the strong spin coupling energy in SrIrO3,the degree of interface charge transfer can be effectively adjusted and controlled such that the magnetic coupling performance of the heterojunction material interface is adjusted.

Description

Technical field [0001] The invention belongs to the technical field of functional materials, data storage materials and magnetic materials, and relates to a heterojunction material and a preparation method and application thereof. Background technique [0002] The synthesis of oxide heterojunctions is currently one of the hotspots in the design of new functional materials. Compared with bulk materials that make up heterojunctions, there are strong interactions between charges, spins, orbits, and lattice degrees of freedom at the oxide heterojunction interface, which makes the heterojunction interface exhibit many peculiar physical properties . Since 2001, the K.S. Takahashi research group of the University of Tokyo has been studying CaRuO 3 (Paramagnetic) / CaMnO 3 (Anti-ferromagnetism) The origin of the ferromagnetic order of the heterojunction interface has been raised in the charge transfer, which has become a core issue in the discussion of the physical properties of the oxide...

Claims

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Application Information

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IPC IPC(8): H01L43/10H01L43/12C23C14/02C23C14/08C23C14/28C23C14/58G01R33/02G01R33/14
CPCC23C14/28C23C14/08C23C14/021C23C14/5806G01R33/02G01R33/14H10N50/85H10N50/01
Inventor 何洪涛余涛陈平博周良
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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