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LED chip with high-reflectivity electrodes and preparation method thereof

A LED chip and high-reflection technology, which is applied to circuits, electrical components, semiconductor devices, etc., can solve the problems of metal electrode shading and light absorption, electrode drop, poor adhesion, etc., to improve luminous efficiency and service life, reduce Use, the effect of improving adhesion

Inactive Publication Date: 2015-01-28
GUANGDONG DELI PHOTOELECTRIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current blocking layer cannot solve the problem of metal electrode shading and light absorption, and the metal electrode and SiO 2 Poor adhesion, prone to electrode drop, so the technology still needs improvement

Method used

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  • LED chip with high-reflectivity electrodes and preparation method thereof
  • LED chip with high-reflectivity electrodes and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Embodiment 1: as figure 2 As shown, the preparation method of the present invention includes (1) sequentially growing the bottom Si-doped n-type semiconductor layer 1, the InGaN / GaN multi-quantum well active region 2 and the uppermost Mg-doped p-type semiconductor layer on the substrate. The semiconductor layer 3; (2) performing ICP etching on part of the p-type semiconductor layer 3 and the multi-quantum well active region 2 to expose the n-type semiconductor layer 1; (3) making an n-type electrode on the exposed n-type semiconductor layer 1, Make a p-type electrode on the unetched p-type semiconductor layer 3, wherein, the method for making the p-type electrode comprises the following steps:

[0026] Step 1: Plating a transparent conductive layer 4 on the p-type semiconductor layer 3, the selected material is ITO.

[0027] Step 2: plate an adhesive current blocking layer 5 on the transparent conductive layer 4, and the selected material is Al made by MOCVD 2 o 3 ,...

Embodiment 2

[0033] Embodiment 2: as figure 2 As shown, the preparation method of the present invention includes (1) sequentially growing the bottom Si-doped n-type semiconductor layer 1, the InGaN / GaN multi-quantum well active region 2 and the uppermost Mg-doped p-type semiconductor layer on the substrate. The semiconductor layer 3; (2) performing ICP etching on part of the p-type semiconductor layer 3 and the multi-quantum well active region 2 to expose the n-type semiconductor layer 1; (3) making an n-type electrode on the exposed n-type semiconductor layer 1, Make a p-type electrode on the unetched p-type semiconductor layer 3, wherein, the method for making the p-type electrode comprises the following steps:

[0034] Step 1: Plating a transparent conductive layer 4 on the p-type semiconductor layer 3, the selected material is ZnO.

[0035] Step 2: plate an adhesive current blocking layer 5 on the transparent conductive layer 4, and the selected material is Al made by MOCVD 2 o 3 ,...

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Abstract

The invention discloses an LED chip with high-reflectivity electrodes. The LED chip with the high-reflectivity electrodes comprises an n-type semiconductor layer growing on a substrate, a multiple-quantum-well active region and a p-type semiconductor layer, wherein the n-type electrode is made on the n-type semiconductor layer, and the p-type electrode is made on the p-type semiconductor layer. The LED chip with the high-reflectivity electrodes is characterized in that the p-type electrode comprises a transparent conducting layer, an adhesive current barrier layer, a metal reflection layer, a metal adhesion layer, a metal contact layer and an insulating protection layer, wherein the transparent conducting layer, the adhesive current barrier layer, the metal reflection layer, the metal adhesion layer, the metal contact layer and the insulating protection layer are sequentially made on the p-type semiconductor layer. Meanwhile, the invention discloses a preparation method of the LED chip. According to the LED chip with the high-reflectivity electrodes, the high-reflectivity metal reflection layer is used for reducing light absorption of the metal electrodes and reflecting a large amount of light to other light-emitting surfaces, so that the light extraction efficiency is improved; meanwhile, the adhesive current barrier layer is used for solving the problem of current congestion, so that the uniformity of current injection is improved, and local overheating is avoided; besides, the adhesive current barrier layer can improve the adhesion with reflective metal, so that the luminous efficiency of an LED is improved and the service life of the LED is prolonged comprehensively and eventually .

Description

technical field [0001] The invention relates to the technical field of LED chips, in particular to an LED chip with a highly reflective electrode and a preparation method thereof. Background technique [0002] LEDs are pn diodes made of semiconductor materials with direct band gaps. Under thermal balance, a large amount of electron energy is not enough to transition from the valence band to the conduction band. If a forward bias is applied, electrons will transition from the valence band to the conduction band, and at the same time form corresponding vacancies in the valence band. Under proper conditions, electrons and holes combine in the pn junction region, and the energy of the electrons is emitted in the form of light. The injection of the power supply makes the electrons and holes continuously replenish the n-type semiconductor and the p-type semiconductor, so that the light-emitting process continues. The structure of a traditional blue-green LED chip is as follows: ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/42H01L33/46H01L33/00
CPCH01L33/005H01L33/42H01L33/46H01L2933/0008H01L2933/0016H01L2933/0025
Inventor 易翰翔郝锐吴魁黄惠葵
Owner GUANGDONG DELI PHOTOELECTRIC