Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Cleaning solution for removing light resistance residue

A technology of photoresist residue and cleaning liquid, applied in the direction of photosensitive material processing, can solve problems such as increasing metal corrosion, and achieve the effect of good application prospects

Inactive Publication Date: 2015-02-11
ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, increasing the alkalinity and operating temperature of the cleaning solution and prolonging the cleaning time tend to increase the corrosion of the metal

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Cleaning solution for removing light resistance residue
  • Cleaning solution for removing light resistance residue
  • Cleaning solution for removing light resistance residue

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The advantages of the present invention are further described below through specific examples, but the protection scope of the present invention is not limited only to the following examples.

[0023] The reagents and raw materials used in the present invention are all commercially available. The cleaning solution of the present invention can be prepared by simply and uniformly mixing the above components.

[0024] Table 1 embodiment and the composition and content of comparative example cleaning solution

[0025]

[0026]

[0027] In order to further investigate the cleaning situation of this type of cleaning solution, the present invention adopts the following technical means: the wafers containing photoresist residues after the convex balls have been electroplated in the wafer microsphere implantation process are respectively immersed in the cleaning solution for 25 Use a constant temperature oscillator to vibrate at a vibration frequency of about 60 rpm for 3...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention discloses a cleaning solution for removing a light resistance residue. The cleaning solution comprises a quaternary amine hydroxide, an alcohol amine and a solvent, and further comprises a lipid material, wherein the lipid material has the general formula of R-COCH2COOCH2R', and the number of the carbon molecules in the group R or R' is less than or equal to 4.

Description

technical field [0001] The invention relates to a cleaning solution for removing photoresist residues. Background technique [0002] In the usual semiconductor manufacturing process, a photoresist mask is formed on the surface of some materials, and the pattern is transferred after exposure. After the required pattern is obtained, the remaining photoresist needs to be peeled off before the next process. . This process requires complete removal of unwanted photoresist without etching any substrate. [0003] At present, the photoresist cleaning solution is mainly composed of polar organic solvents, strong alkali and / or water, and the photoresist on the semiconductor wafer is removed by immersing the semiconductor wafer in the cleaning solution or rinsing the semiconductor wafer with the cleaning solution. [0004] For example, WO2006 / 056298A1 uses an alkaline cleaning solution composed of tetramethylammonium hydroxide (TMAH), dimethyl sulfoxide (DMSO), ethylene glycol (EG) a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/42
Inventor 孙广胜刘兵何春阳
Owner ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com