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Cleaning solution for removing light resistance residue

A technology of photoresist residue and cleaning solution, which is applied in the processing of photosensitive materials, etc., can solve the problems of increasing metal corrosion, achieve the effect of increasing the operating window and good application prospects

Active Publication Date: 2015-02-11
宁波安集微电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, increasing the alkalinity and operating temperature of the cleaning solution and prolonging the cleaning time tend to increase the corrosion of the metal

Method used

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  • Cleaning solution for removing light resistance residue
  • Cleaning solution for removing light resistance residue
  • Cleaning solution for removing light resistance residue

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Embodiment Construction

[0017] The advantages of the present invention are further described below through specific examples, but the protection scope of the present invention is not limited only to the following examples.

[0018] The reagents and raw materials used in the present invention are all commercially available. The cleaning solution of the present invention can be prepared by simply and uniformly mixing the above components.

[0019] Table 1 embodiment and the composition and content of comparative example cleaning solution

[0020]

[0021]

[0022] In order to further investigate the cleaning situation of this type of cleaning solution, the present invention adopts the following technical means: the wafers containing photoresist residues after the convex balls have been electroplated in the wafer microsphere implantation process are respectively immersed in the cleaning solution for 25 Use a constant temperature oscillator to vibrate at a vibration frequency of about 60 rpm for 3...

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Abstract

The present invention discloses a cleaning solution for removing a light resistance residue. The cleaning solution comprises a quaternary amine hydroxide, an alcohol amine, a solvent and silane, and further comprises a star copolymer having a pigment adsorbing group.

Description

technical field [0001] The invention relates to a cleaning solution for removing photoresist residues. Background technique [0002] In the manufacturing process of semiconductor components, a photoresist mask is formed on the surface of some materials, and the pattern is transferred after exposure. After the required pattern is obtained, the remaining photoresist needs to be removed before the next process. In the photoresist removal process, it is required to completely remove the unnecessary photoresist, and at the same time, not corrode any substrate, especially strictly control the corrosion of metal aluminum and copper. [0003] At present, the photoresist cleaning solution is mainly composed of polar organic solvents, strong alkali and / or water, and the photoresist on the semiconductor wafer is removed by immersing the semiconductor wafer in the cleaning solution or rinsing the semiconductor wafer with the cleaning solution. For example, JP1998239865 discloses a clea...

Claims

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Application Information

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IPC IPC(8): G03F7/42
Inventor 何春阳刘兵孙广胜
Owner 宁波安集微电子科技有限公司