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Back lighting type image sensor structure capable of improving saturation throughput

An image sensor, back-illuminated technology, applied in the field of image sensors, can solve the problems of low pixel signal saturation capacity and small pixel area, and achieve the effect of improving signal saturation capacity and improving potential well potential swing

Inactive Publication Date: 2015-02-18
BEIJING SUPERPIX MICRO TECHNOLOGY CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Back-illuminated image sensors generally use small-area pixels, the pixel area is small, and the signal saturation capacity of the pixels is low

Method used

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  • Back lighting type image sensor structure capable of improving saturation throughput
  • Back lighting type image sensor structure capable of improving saturation throughput
  • Back lighting type image sensor structure capable of improving saturation throughput

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specific Embodiment approach

[0016] The preferred embodiment of the structure of the back-illuminated image sensor with improved saturation capacity of the present invention is:

[0017] It includes a logic circuit and a pixel array placed in a semiconductor substrate, an N-type ion ring is arranged in the semiconductor substrate around the pixel array region, and a P-type ion ring is arranged between the pixel array region and the N-type ion ring .

[0018] The N-type ionic ring runs through the thickness of the semiconductor substrate, its upper surface is the front of the substrate, and its lower surface is the back of the substrate, and the width of the N-type ionic ring in the semiconductor substrate is greater than or equal to 0.2um.

[0019] The depth of the P-type ion ring in the semiconductor matrix is ​​greater than or equal to 0.2um, and the width is greater than or equal to 0.2um.

[0020] The distance between the N-type ion ring and the P-type ion ring is greater than or equal to 0um.

[00...

specific Embodiment

[0025] Schematic diagram of the sectional structure of the back-illuminated image sensor structure with improved saturation capacity of the present invention, as shown in image 3 shown. image 3 Among them, 301 is the semiconductor base in the pixel array area, 301' is the semiconductor base in the logic circuit area, 302 is the photodiode, 303 is the shallow trench isolation area, 304 is the polysilicon gate of the transistor device, 305 is the metal interconnection line, 306 is The color filter on the back side, 307 is the microlens on the back side, 308 is the N-type ion ring, and 309 is the P-type ion ring; wherein, Vn is the external potential of the N-type ion ring 308, and Vp is the external connection of the P-type ion ring 309 potential, GND is the external potential of the semiconductor substrate 301' in the logic circuit region.

[0026] A schematic plan view of the structure of the back-illuminated image sensor with improved saturation capacity of the present inv...

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Abstract

The invention discloses a back lighting type image sensor structure capable of improving the saturation throughput. The back lighting type image sensor structure capable of improving the saturation throughput comprises a logic circuit arranged in semiconductor substrates and a pixel array, wherein N type ion rings are arranged in the semiconductor substrates around the pixel array area, and P type ion rings are arranged between the pixel array area and the N type ion rings. According to the back lighting type image sensor structure capable of improving the saturation throughput, the semiconductor substrates in the pixel array area are separated from the semiconductor substrates in the logic circuit area through the N type ion rings, and different electric potentials can be set for the semiconductor substrates in the two areas; the potential well electric potential swing of photodiodes in pixels is effectively improved by externally connecting the P type ion rings between the pixel array and the N type ion rings with a negative electric potential, and the signal saturation throughput of the pixels is improved.

Description

technical field [0001] The invention relates to an image sensor, in particular to a structure of a back-illuminated image sensor with improved saturation capacity. Background technique [0002] Image sensors have been widely used in digital cameras, mobile phones, medical devices, automobiles and other applications. In particular, the rapid development of the technology for manufacturing CMOS (Complementary Metal Oxide Semiconductor) image sensors has made people have higher requirements for the output image quality of the image sensors. [0003] Image sensors are classified in terms of lighting methods, including front-illuminated and back-illuminated types. Back-illuminated image sensors are more suitable for making small-sized chips for special purposes; and small-sized chips generally use small-area pixels in order to maintain high-resolution requirements. The smaller the pixel area, the smaller the signal charge saturation capacity will be . [0004] Such as figure ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
Inventor 郭同辉旷章曲
Owner BEIJING SUPERPIX MICRO TECHNOLOGY CO LTD
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