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Single-substrate integrated terahertz front end

A terahertz, single-substrate technology, applied in the terahertz front-end field, can solve problems such as insufficient integration and loss

Active Publication Date: 2015-02-18
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The existing technology integration level is not high enough, there are two dielectric substrates and need to use a waveguide to connect the transition and there is a loss

Method used

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Examples

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Embodiment 1

[0046] Such as Figure 1 to Figure 10 shown.

[0047] A single-substrate integrated terahertz front-end, including a dielectric substrate 10 arranged in an air cavity 11, in the direction from left to right (as shown in the figure, along the X-axis direction), the dielectric substrate 10 is provided with microstrips passing sequentially Line-connected CMRC structure microstrip low-pass filter 2, parallel double frequency diode 3, frequency doubling matching stub 4, local oscillator band-pass filter 5, mixing matching stub 6, mixing diode 7, intermediate frequency low-pass filter 9. It also includes an input waveguide microstrip transition 1. A transition microstrip line is also provided on the dielectric substrate 10. The transition microstrip line is connected to the CMRC structure microstrip low-pass filter 2 through the input microstrip line A22. The transition microstrip line is located Both the air cavity 11 and the dielectric substrate 10 in the area extend into the inp...

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Abstract

The invention discloses a single-substrate integrated terahertz front end. The single-substrate integrated terahertz front end comprises a dielectric substrate, an inputting waveguide micro-strip transition and a micro-strip air cavity; the micro-strip air cavity is the air cavity; the inputting wave micro-strip transition (a standard waveguide opening WR-15), a CMRC (compact microstrip resonant cell) structure micro-strip low-pass filter, a parallel double-frequency-doubling diode, a frequency-doubling matching branch knot, a local oscillator band-pass filtering device, a frequency-mixing matching branch knot, a frequency-mixing diode, a radiofrequency waveguide micro-strip transition (a standard waveguide WR-2.2) and an intermediate-frequency low-pass filtering device are sequentially arranged on the single-substrate integrated terahertz front end from left to right. The number of dielectric substrates is reduced; circuits are integrated on the substrate; the number of machined cavities is also reduced; the single-substrate integrated terahertz front end is easy to machine and assemble; designing and machining on the waveguide transition are reduced; and the size of the cavity is also reduced.

Description

technical field [0001] The invention relates to the technical field of terahertz, in particular to a single-substrate integrated terahertz front end. Background technique [0002] In the field of terahertz technology, mixers and frequency multipliers play a very important role as frequency conversion devices. At present, solid-state terahertz devices are mainly realized by hybrid integrated circuits and monolithic integrated circuits. The radiometer front-end or radar front-end usually requires a mixer and a frequency multiplier to work together, but currently the mixer and the frequency multiplier are integrated as a single device, so there will be connection loss when implementing the terahertz front-end. In the prior art, two transition structures from waveguides to microstrip lines are required to connect the frequency multiplier and the mixer, and the frequency multiplier and the mixer need to be processed on two substrates of different widths, making processing and ass...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01P5/12
Inventor 张波纪东峰司梦姣杨益林刘戈牛中乾周游樊勇
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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