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Vertical Cavity Surface Emitting Laser Elements, Vertical Cavity Surface Emitting Laser Array Elements

A technology for emitting lasers and components, which is applied to laser components, lasers, electrical components, etc., and can solve problems such as easy damage of laser components and crystallization of the light-emitting part.

Active Publication Date: 2017-06-20
MURATA MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] However, the light-emitting part of the VCSEL element is prone to crystallization due to impact, and when a flat collet is used as the mold collet DC, there is a mold collet DC that is in contact with the light-emitting part, resulting in the vertical resonator surface emitting laser device. Problems like breakage

Method used

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  • Vertical Cavity Surface Emitting Laser Elements, Vertical Cavity Surface Emitting Laser Array Elements
  • Vertical Cavity Surface Emitting Laser Elements, Vertical Cavity Surface Emitting Laser Array Elements
  • Vertical Cavity Surface Emitting Laser Elements, Vertical Cavity Surface Emitting Laser Array Elements

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Embodiment Construction

[0042] A vertical cavity surface emitting laser element (VCSEL element) according to a first embodiment of the present invention will be described with reference to the drawings. Hereinafter, a vertical cavity surface emitting laser element is referred to as a "VCSEL element".

[0043] figure 1 It is a plan view of the vertical cavity surface emitting laser device 10 according to the first embodiment of the present invention. figure 2 It is an AA' cross-sectional view of the vertical cavity surface emitting laser device 10 according to the first embodiment of the present invention. image 3 It is a BB' cross-sectional view of the vertical cavity surface emitting laser device 10 according to the first embodiment of the present invention.

[0044] VCSEL element 10 consists of a figure 1 , figure 2 , image 3 The structure shown is composed of heterojunction semiconductors. The vertical cavity surface emitting laser 10 includes a base substrate 11 made of GaAs.

[0045...

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Abstract

The present invention provides a vertical cavity surface emitting laser element. A cathode electrode (911), cathode pad electrodes (912A, 912B), cathode wiring electrodes (913A, 913B), anode electrode (921), An anode pad electrode (922), and an anode wiring electrode (923). A light-emitting region multilayer portion having a structure in which an active layer is sandwiched between a cladding layer and a DBR layer is formed directly below the anode electrode (921). A region where the light emitting region multilayer portion is formed becomes a light emitting region (700). The light-emitting region (700) is arranged such that it is substantially in contact with or separated from the adsorption region (800) by a predetermined distance on one end side of the adsorption region (800) in the first direction relative to the first direction.

Description

technical field [0001] The present invention relates to a vertical cavity surface emitting laser element for irradiating laser light in a direction perpendicular to a mounting surface, and a vertical cavity surface emitting laser array element in which a plurality of such vertical cavity surface emitting laser elements are arranged. Background technique [0002] Currently, as a type of semiconductor laser, a vertical cavity surface emitting laser element (VCSEL (Vertical Cavity Surface Emitting LASER)) is being put into practical use. Hereinafter, a vertical cavity surface emitting laser element is referred to as a "VCSEL element". [0003] The general structure of a VCSEL element is as shown in Patent Document 1, for example, in which a first DBR (multilayer distributed Bragg reflector) layer is formed on an upper layer of a base substrate. A first isolation layer is formed on an upper layer of the first DBR (Multilayer Distributed Bragg Reflector) layer. An active layer ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/02H01S5/183H01S5/42
CPCH01S5/18311H01S5/423H01S5/0208H01S5/3432H01L24/75H01L24/83H01S5/04256H01S5/04257H01S2301/176H01S5/02345H01S5/183H01S5/34
Inventor 岩田圭司松原一平粉奈孝行渡边博柳濑雅司
Owner MURATA MFG CO LTD