Parallel-connection type integrated packaging large-power current transforming module

An integrated packaging, high-power technology, applied in the conversion of AC power input to DC power output, output power conversion devices, conversion equipment structural components and other directions, can solve the problem of large size, poor service life of high-power IGBT inverter modules, High-power IGBT chip heat dissipation and other problems, to avoid damage, improve service life, and reduce maintenance costs

Inactive Publication Date: 2015-02-25
GUANGDONG MENLO ELECTRIC POWER
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current high-power IGBT inverter module mainly has the following disadvantages: (1) It is a whole module. Once a chip inside the module is damaged, the entire high-power IGBT inverter module cannot work, and the power system stops working. (2) Since the high-power IGBT inverter module uses a high-power IGBT chip, under the same material design technology, the greater the power of the IGBT chip, the larger its volume, because of The heat is very large, so even if a heat sink (water cooling or air cooling, etc.) is installed close to the surface of the high-power IGBT chip, it is difficult to dissipate the heat inside the high-power IGBT chip, which increases the risk of damage to the high-power IGBT chip. The service life of the entire high-power IGBT inverter module is also relatively poor

Method used

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  • Parallel-connection type integrated packaging large-power current transforming module
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  • Parallel-connection type integrated packaging large-power current transforming module

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Embodiment one, see figure 1 and figure 2 As shown, a parallel integrated packaging high-power converter module includes at least two low-power sub-converter modules 2 that are connected in parallel and stacked vertically (in this embodiment, three low-power sub-converter modules 2 are stacked vertically And connected in parallel, according to actual needs, it can be made by stacking two, four, five, etc. together to form a high-power converter module), the low-power sub-converter module 2 includes the circuit part 4, insulation and heat conduction Layer 3 and radiator 1, the circuit part 4 is packaged in the insulating and heat-conducting layer 3, the circuit part 4 includes a plurality of IGBT chips 7 and a plurality of diodes 8, the radiator 1 is arranged on the outer surface of the insulating and heat-conducting layer 3, and the insulating and heat-conducting layer 3 The surface is also provided with a DC input terminal and an AC output terminal, and the circuit p...

Embodiment 2

[0035] Embodiment two, the difference with embodiment one is: see Figure 4 As shown, each small-power sub-converter module 2 is connected in parallel and connected together in a horizontal arrangement.

Embodiment 3

[0036] Embodiment three, the difference with embodiment one is: see Figure 5 and Figure 6 As shown, heat dissipation fins 11 are provided on the surface of the heat dissipation body 1, and water flow channels 13 are formed between the heat dissipation fins 11. By injecting water or cooling liquid into the water flow channels 13, liquid cooling can be realized for small power The sub-converter module 2 dissipates heat. The water flow channel 13 can be a slender channel with openings at both ends. When the upper and lower low-power sub-conversion modules 2 are stacked, the two openings at the head and tail of the upper and lower low-power sub-conversion modules 2 can be connected in series through the water pipe 40, and the upper and lower sub-conversion modules 2 can be connected in series. A seal ring 30 should be provided between the two low-power sub-converter modules 2 , and the surface of the heat sink 1 on the outside should be connected to the seal ring 30 and the cov...

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Abstract

The invention relates to a parallel-connection type integrated packaging large-power current transforming module. The parallel-connection type integrated packaging large-power current transforming module comprises at least two small-power subsidiary current transforming modules which are connected in parallel, overlapped in the longitudinal direction or distributed in the transverse direction; each small-power subsidiary current transforming module comprises a circuit part, an insulating heat conduction layer and a heat radiation body, wherein the circuit part is packaged in the insulating heat conduction layer and comprises a plurality of IGBT chips and a plurality of diodes, the heat radiation body is arranged on the outer surface of the insulating heat conduction layer, the surface of the insulating heat conduction layer is further provided with a direct current input terminal and an alternating current output terminal, and the circuit part is connected between the direct current input terminal and the alternating current output terminal. In the use process of the parallel-connection type integrated packaging large-power current transforming module, continuous operation of a power system can still be guaranteed even though part of the mall-power subsidiary current transforming modules are damaged so that a user can carry out a next remedial measure conveniently.

Description

technical field [0001] The invention relates to the technical field of converter modules, in particular to a parallel integrated package high-power converter module. Background technique [0002] High-power IGBT inverter modules are mainly used in power systems such as battery cars and elevators to convert DC power into high-voltage AC power and drive motors in the power system. However, the current high-power IGBT inverter module mainly has the following disadvantages: (1) It is a whole module. Once a chip inside the module is damaged, the entire high-power IGBT inverter module cannot work, and the power system stops working. (2) Since the high-power IGBT inverter module uses a high-power IGBT chip, under the same material design technology, the greater the power of the IGBT chip, the larger its volume, because of The heat is very large, so even if a radiator (water cooling or air cooling, etc.) is installed close to the surface of the high-power IGBT chip, it is difficult...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M7/00H05K7/20
CPCH02M7/003H05K7/2089
Inventor 孔星
Owner GUANGDONG MENLO ELECTRIC POWER
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