Nanotwinned copper redistribution wire manufacturing method

Abstract

The invention provides a nanotwinned copper redistribution wire manufacturing method. The method comprises steps: 1) a passivation layer is manufactured on a substrate, and a window interconnected with a chip electrode plate is photoetched; 2) seed layers are formed on the surface of the passivation layer and in the interconnected window; 3) a photoresist pattern of nanotwinned copper redistribution wire is formed on the surface of the seed layer, and a nanotwinned copper redistribution wire layer is manufactured on the surface of the exposed seed layer by adopting a pulse electroplating method; and 4) the photoresist pattern is removed and the extra seed layer is corroded. Pulse electroplating with rapid annealing treatment is adopted, large internal stress formed by pulse electroplating drives copper for re-crystallization, and a high-density nanotwinned copper redistribution wire is formed. Current adopted by the invention is low in density, current equipment can be used, the prior IC technology can be fully compatible, the method belongs to the wafer level packaging technology, the efficiency is high, and the cost is low. The manufactured nanotwinned copper is excellent in comprehensive mechanical performance, the size of the redistribution wire can be greatly shortened to about 10mum, and thermal mechanical reliability is high.

Description

technical field [0001] The invention belongs to the field of semiconductor packaging, in particular to a preparation method of nano-twinned copper rewiring. Background technique [0002] Wafer-level packaging means that chips and packages are manufactured and tested on the wafer, and finally diced. The first step of wafer-level packaging is to expand the pitch of standard IC pads through rewiring technology, and then perform low-cost ball planting to increase the pitch and size of solder balls, ensuring higher board-level reliability. [0003] Rewiring technology is the core process of wafer level packaging, which directly determines the excellent packaging performance. Compared with the chip size, the rewiring distance is often longer and has larger parasitic effects. Rewiring often requires a turn in the routing direction to coordinate other solder joints and wiring to achieve high-density packaging. Rewiring needs to be connected with solder balls through UBM, which be...

AI Technical Summary

Problems solved by technology

[0006] In view of the above, there is currently no publication of any technology for pulse-plated nano-twinned copper redistribution compatible with wafer-level processes

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