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Grooved diode with floating island structure

A trench type, diode technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problem of unsatisfactory high temperature reliability of Schottky junctions, and achieve good reliability, low forward voltage drop, and reverse recovery short time effect

Inactive Publication Date: 2015-03-04
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The TMBS rectifier was first proposed by B.J.Baliga in 1993, such as figure 1 As shown, although the device effectively improves the reverse leakage and breakdown voltage of the planar Schottky diode, the unsatisfactory high-temperature reliability of the Schottky junction is still a problem, especially during high-temperature operation.

Method used

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  • Grooved diode with floating island structure
  • Grooved diode with floating island structure
  • Grooved diode with floating island structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Such as figure 2 As shown, this example includes an N-type semiconductor substrate 7, a cathode 8 positioned at the bottom of the N-type semiconductor substrate 7, an N-type semiconductor drift region 6 positioned on the upper layer of the N-type semiconductor substrate 7, and a A gate oxide layer 2 and an anode 1 located on the upper layer of the gate oxide layer 2; the gate oxide layer 2 is a trench structure; a first N-type semiconductor doped region 3, a floating P island 4 and a second N-type semiconductor doped region 5; the second N-type semiconductor doped region 5 is located on the sidewall of the trench and connected to the gate oxide layer 2; the floating P island 4 is located between the second N-type semiconductor doped region 5 Between; the first N-type semiconductor doped region 3 is located on the top of the second N-type semiconductor doped region 5 and the floating P island 4, and is connected to the anode 1.

[0029] This example works as follows: ...

Embodiment 2

[0033] Such as Figure 4 As shown, the structure of this example is based on Example 1, and the floating P island 4 and the second N-type semiconductor doped region 5 are shortened to the region above the trench at the same time. The working principle of this example is the same as that of Example 1. same.

Embodiment 3

[0035] Such as Figure 5 As shown, the structure of this example is based on Example 1, and the floating P island 4 and the second N-type semiconductor doped region 5 are simultaneously extended to the region below the trench. The working principle of this example is the same as that of Example 1. same.

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Abstract

The invention belongs to the technical field of power semiconductor devices and relates to a grooved diode with a floating island structure. The grooved diode is characterized in that a first N type semiconductor doped region, a floating P island and second N type semiconductor doped regions are arranged in the groove, the sidewalls, located at the groove, of the second N type semiconductor doped regions are connected with gate oxide layers, the floating P island is located between the second N type semiconductor doped regions, and the first N type semiconductor doped region is located on the tops of the second N type semiconductor doped regions and the floating P island and connected with an anode. The grooved diode with the floating island structure has the beneficial effects that lower forward voltage drop can be realized under the same current density and the reliability of the device is better at high temperatures. The grooved diode with the floating island structure is especially suitable for the grooved diodes.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and in particular relates to a trench type diode which utilizes an accumulation layer and a P floating island to jointly control a conduction channel. Background technique [0002] Power rectifiers are usually used in power electronic circuits to control the direction of current. According to their conduction characteristics and blocking capabilities, corresponding devices are often used to achieve rectification. When used in the high-voltage field, the forward conduction voltage drop of traditional PIN diodes is generally higher than 0.7V (the on-state current density is 100A / cm 2 ), and the turn-on voltage is higher, and the reverse recovery time is longer. In the low-voltage field, planar Schottky diodes have large leakage and high power consumption at high temperatures, and their breakdown voltage is generally below 200V. [0003] The TMBS rectifier was first proposed by...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/861H01L29/06
CPCH01L29/0684H01L29/861
Inventor 李泽宏伍济刘永陈钱郭绪阳
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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